Overview
The FDS4559 is a complementary MOSFET device produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is available in an SO-8 package and is Pb-Free and Halide-Free, making it environmentally friendly.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) |
|---|---|---|
| VDS (Drain-Source Voltage) | 60 V | -60 V |
| ID (Drain Current) | 4.5 A | -3.5 A |
| RDS(on) @ VGS = 10 V | 55 mΩ | 105 mΩ |
| RDS(on) @ VGS = 4.5 V | 75 mΩ | 135 mΩ |
| Qg (Total Gate Charge) | 12.5 - 18 nC | 12.5 - 18 nC |
| Qgs (Gate-Source Charge) | 2.4 - 2.5 nC | 2.4 - 2.5 nC |
| Qgd (Gate-Drain Charge) | 2.6 - 3.0 nC | 2.6 - 3.0 nC |
| VSD (Drain-Source Diode Forward Voltage) | 0.8 - 1.2 V | -0.8 - -1.2 V |
| IS (Maximum Continuous Drain-Source Diode Forward Current) | 1.3 A | -1.3 A |
Key Features
- Complementary MOSFET device with N-Channel and P-Channel configurations.
- Produced using onsemi’s advanced PowerTrench process to minimize on-state resistance and maintain low gate charge.
- High current handling: N-Channel up to 4.5 A, P-Channel up to -3.5 A.
- High voltage ratings: N-Channel 60 V, P-Channel -60 V.
- Low RDS(on): 55 mΩ @ VGS = 10 V for N-Channel, 105 mΩ @ VGS = -10 V for P-Channel.
- Pb-Free and Halide-Free, making it environmentally friendly.
Applications
- DC/DC converters.
- Power management systems.
- LCD backlight inverters.
Q & A
- What is the FDS4559 MOSFET device?
The FDS4559 is a complementary MOSFET device produced by onsemi, featuring both N-Channel and P-Channel configurations.
- What is the PowerTrench process used in the FDS4559?
The PowerTrench process is an advanced technology used by onsemi to minimize on-state resistance while maintaining low gate charge for superior switching performance.
- What are the voltage and current ratings for the N-Channel and P-Channel of the FDS4559?
The N-Channel has a voltage rating of 60 V and a current rating of 4.5 A, while the P-Channel has a voltage rating of -60 V and a current rating of -3.5 A.
- What are the typical RDS(on) values for the FDS4559?
The N-Channel has an RDS(on) of 55 mΩ @ VGS = 10 V and 75 mΩ @ VGS = 4.5 V. The P-Channel has an RDS(on) of 105 mΩ @ VGS = -10 V and 135 mΩ @ VGS = -4.5 V.
- What are the common applications of the FDS4559?
The FDS4559 is commonly used in DC/DC converters, power management systems, and LCD backlight inverters.
- Is the FDS4559 environmentally friendly?
- What is the package type of the FDS4559?
The FDS4559 is available in an SO-8 package.
- What are the gate charge characteristics of the FDS4559?
The total gate charge (Qg) ranges from 12.5 to 18 nC, and the gate-source charge (Qgs) ranges from 2.4 to 2.5 nC.
- What is the maximum continuous drain-source diode forward current for the FDS4559?
The maximum continuous drain-source diode forward current is 1.3 A for the N-Channel and -1.3 A for the P-Channel.
- What is the thermal resistance (RθJA) of the FDS4559?
The thermal resistance (RθJA) is 135°C/W.
