FDS4559
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onsemi FDS4559

Manufacturer No:
FDS4559
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V 4.5/3.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4559 is a complementary MOSFET device produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is available in an SO-8 package and is Pb-Free and Halide-Free, making it environmentally friendly.

Key Specifications

Parameter Q1 (N-Channel) Q2 (P-Channel)
VDS (Drain-Source Voltage) 60 V -60 V
ID (Drain Current) 4.5 A -3.5 A
RDS(on) @ VGS = 10 V 55 mΩ 105 mΩ
RDS(on) @ VGS = 4.5 V 75 mΩ 135 mΩ
Qg (Total Gate Charge) 12.5 - 18 nC 12.5 - 18 nC
Qgs (Gate-Source Charge) 2.4 - 2.5 nC 2.4 - 2.5 nC
Qgd (Gate-Drain Charge) 2.6 - 3.0 nC 2.6 - 3.0 nC
VSD (Drain-Source Diode Forward Voltage) 0.8 - 1.2 V -0.8 - -1.2 V
IS (Maximum Continuous Drain-Source Diode Forward Current) 1.3 A -1.3 A

Key Features

  • Complementary MOSFET device with N-Channel and P-Channel configurations.
  • Produced using onsemi’s advanced PowerTrench process to minimize on-state resistance and maintain low gate charge.
  • High current handling: N-Channel up to 4.5 A, P-Channel up to -3.5 A.
  • High voltage ratings: N-Channel 60 V, P-Channel -60 V.
  • Low RDS(on): 55 mΩ @ VGS = 10 V for N-Channel, 105 mΩ @ VGS = -10 V for P-Channel.
  • Pb-Free and Halide-Free, making it environmentally friendly.

Applications

  • DC/DC converters.
  • Power management systems.
  • LCD backlight inverters.

Q & A

  1. What is the FDS4559 MOSFET device?

    The FDS4559 is a complementary MOSFET device produced by onsemi, featuring both N-Channel and P-Channel configurations.

  2. What is the PowerTrench process used in the FDS4559?

    The PowerTrench process is an advanced technology used by onsemi to minimize on-state resistance while maintaining low gate charge for superior switching performance.

  3. What are the voltage and current ratings for the N-Channel and P-Channel of the FDS4559?

    The N-Channel has a voltage rating of 60 V and a current rating of 4.5 A, while the P-Channel has a voltage rating of -60 V and a current rating of -3.5 A.

  4. What are the typical RDS(on) values for the FDS4559?

    The N-Channel has an RDS(on) of 55 mΩ @ VGS = 10 V and 75 mΩ @ VGS = 4.5 V. The P-Channel has an RDS(on) of 105 mΩ @ VGS = -10 V and 135 mΩ @ VGS = -4.5 V.

  5. What are the common applications of the FDS4559?

    The FDS4559 is commonly used in DC/DC converters, power management systems, and LCD backlight inverters.

  6. Is the FDS4559 environmentally friendly?
  7. What is the package type of the FDS4559?

    The FDS4559 is available in an SO-8 package.

  8. What are the gate charge characteristics of the FDS4559?

    The total gate charge (Qg) ranges from 12.5 to 18 nC, and the gate-source charge (Qgs) ranges from 2.4 to 2.5 nC.

  9. What is the maximum continuous drain-source diode forward current for the FDS4559?

    The maximum continuous drain-source diode forward current is 1.3 A for the N-Channel and -1.3 A for the P-Channel.

  10. What is the thermal resistance (RθJA) of the FDS4559?

    The thermal resistance (RθJA) is 135°C/W.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:4.5A, 3.5A
Rds On (Max) @ Id, Vgs:55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
Power - Max:1W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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