Overview
The FDME1024NZT is a dual N-Channel PowerTrench® MOSFET produced by onsemi. This device is specifically designed as a single package solution to meet the dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance, minimizing conduction losses. The MicroFET™ 1.6x1.6 Thin package offers exceptional thermal performance and is well-suited for both switching and linear mode applications.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | ID = 250 μA, VGS = 0 V | - | - | 20 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±8 | V |
| ID (Drain Current) | TA = 25°C, Continuous | - | - | 3.8 | A |
| ID (Drain Current) | TA = 25°C, Pulsed | - | - | 6 | A |
| PD (Power Dissipation) | TA = 25°C, Single Operation | - | - | 1.4 | W |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 4.5 V, ID = 3.4 A | - | - | 66 | mΩ |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 2.5 V, ID = 2.9 A | - | - | 86 | mΩ |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 1.8 V, ID = 2.5 A | - | - | 113 | mΩ |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 1.5 V, ID = 2.1 A | - | - | 160 | mΩ |
| TJ (Junction Temperature) | Operating and Storage | -55 | - | 150 | °C |
| RθJA (Thermal Resistance) | Junction to Ambient (Single Operation) | - | - | 90 / 195 | °C/W |
Key Features
- Low on-state resistance (RDS(on)) for minimum conduction losses: 66 mΩ at VGS = 4.5 V, ID = 3.4 A; 86 mΩ at VGS = 2.5 V, ID = 2.9 A; 113 mΩ at VGS = 1.8 V, ID = 2.5 A; and 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
- Low profile MicroFET™ 1.6x1.6 Thin package with a maximum height of 0.55 mm, offering exceptional thermal performance.
- Free from halogenated compounds and antimony oxides, and RoHS compliant.
- HBM ESD protection level > 1600 V.
- Two independent N-Channel MOSFETs in a single package, suitable for dual switching requirements.
Applications
- Cellular handsets and other ultra-portable applications.
- Baseband switch and load switch applications.
Q & A
- What is the maximum drain to source voltage (VDS) for the FDME1024NZT?
The maximum drain to source voltage (VDS) is 20 V.
- What are the typical values of RDS(on) at different VGS and ID conditions?
The RDS(on) values are 66 mΩ at VGS = 4.5 V, ID = 3.4 A; 86 mΩ at VGS = 2.5 V, ID = 2.9 A; 113 mΩ at VGS = 1.8 V, ID = 2.5 A; and 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
- What is the thermal resistance (RθJA) for this device?
The thermal resistance (RθJA) is 90 °C/W when mounted on a 1 in^2 pad of 2 oz copper and 195 °C/W when mounted on a minimum pad of 2 oz copper.
- Is the FDME1024NZT RoHS compliant?
Yes, the FDME1024NZT is RoHS compliant and free from halogenated compounds and antimony oxides.
- What is the ESD protection level for this device?
The HBM ESD protection level is greater than 1600 V.
- What are the typical applications for the FDME1024NZT?
The device is typically used in cellular handsets, other ultra-portable applications, baseband switches, and load switches.
- What is the package type and dimensions of the FDME1024NZT?
The device is packaged in a MicroFET™ 1.6x1.6 Thin package with a maximum height of 0.55 mm.
- What are the operating and storage junction temperature ranges for this device?
The operating and storage junction temperature range is from -55°C to +150°C.
- How many MOSFETs are included in the FDME1024NZT package?
The package includes two independent N-Channel MOSFETs.
- What is the maximum continuous drain current (ID) for the FDME1024NZT?
The maximum continuous drain current (ID) is 3.8 A at TA = 25°C.
