Overview
The FDG6301N is a dual N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. It is particularly suited for low voltage applications and serves as a replacement for bipolar digital transistors and small signal MOSFETs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 25 | V |
| Gate-Source Voltage | VGSS | 8 | V |
| Continuous Drain Current | ID | 0.22 | A |
| Pulsed Drain Current | ID | 0.65 | A |
| Maximum Power Dissipation | PD | 0.3 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Electrostatic Discharge Rating (Human Body Model) | ESD | 6.0 kV | kV |
| Gate Threshold Voltage | VGS(th) | 0.65 - 1.5 | V |
| Static Drain-Source On-Resistance at VGS = 4.5 V | RDS(on) | 2.6 - 4 Ω | Ω |
| Thermal Resistance, Junction-to-Ambient | RθJA | 415 °C/W | °C/W |
Key Features
- 25 V, 0.22 A continuous, 0.65 A peak current capability
- Very low on-state resistance: RDS(ON) = 4 Ω @ VGS = 4.5 V and RDS(ON) = 5 Ω @ VGS = 2.7 V
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
- Compact industry standard SC70-6 surface mount package
- Pb-Free and RoHS compliant
Applications
The FDG6301N is suitable for a variety of low voltage applications, including:
- Replacement for bipolar digital transistors and small signal MOSFETs
- Switching and amplification in digital circuits
- Power management and control in low voltage systems
- Automotive and industrial control systems
- Consumer electronics requiring low power consumption and high efficiency
Q & A
- What is the maximum drain-source voltage for the FDG6301N?
The maximum drain-source voltage (VDSS) is 25 V.
- What is the continuous drain current rating of the FDG6301N?
The continuous drain current (ID) is 0.22 A.
- What is the gate-source voltage threshold for the FDG6301N?
The gate-source voltage threshold (VGS(th)) is between 0.65 V and 1.5 V.
- Is the FDG6301N RoHS compliant?
- What is the thermal resistance, junction-to-ambient, for the FDG6301N?
The thermal resistance, junction-to-ambient (RθJA), is 415 °C/W.
- What is the ESD rating for the FDG6301N?
The ESD rating is >6 kV according to the Human Body Model.
- In what package is the FDG6301N available?
The FDG6301N is available in the SC70-6 surface mount package.
- What are the typical applications for the FDG6301N?
Typical applications include replacement for bipolar digital transistors and small signal MOSFETs, switching and amplification in digital circuits, and power management in low voltage systems.
- What is the maximum power dissipation for the FDG6301N?
The maximum power dissipation (PD) is 0.3 W.
- What is the operating and storage temperature range for the FDG6301N?
The operating and storage temperature range is -55 to +150 °C.
