Overview
The BSS138DW-7-F-79 is a dual N-channel enhancement mode field-effect transistor (FET) produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it an excellent choice for various power management and electronic switching applications. The BSS138DW-7-F-79 is packaged in the SOT363 case and is fully RoHS compliant, ensuring environmental sustainability and compliance with international standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 50 | V |
| Drain Current (Id) @ 25°C | 200 | mA |
| Gate Threshold Voltage (Vgs(th)) | 0.5 - 1.5 | V |
| Gate Source Voltage (Vgs) | ±20 | V |
| On-State Resistance (Rds On) @ Vgs = 10V, Id = 220mA | 3.5 | Ω |
| Input Capacitance (Ciss) @ Vds = 10V | 50 | pF |
| Power Dissipation (Pd) @ Ta = 25°C | 200 | mW |
| Operating Temperature Range | -55°C to 150°C | °C |
| Package/Case | SOT363 | |
| Mounting Type | Surface Mount |
Key Features
- Low On-Resistance: The BSS138DW-7-F-79 features a low on-state resistance of 3.5Ω, which enhances its efficiency in power management applications.
- Low Gate Threshold Voltage: With a gate threshold voltage ranging from 0.5V to 1.5V, this FET is easy to switch on and off.
- Low Input Capacitance: The input capacitance is 50 pF at Vds = 10V, contributing to fast switching speeds.
- Fast Switching Speed: The component has a turn-on and turn-off delay time of 20 ns, making it suitable for high-speed applications.
- RoHS Compliance: The BSS138DW-7-F-79 is fully RoHS compliant, ensuring it meets environmental standards.
- Halogen and Antimony Free: The device is free from halogen and antimony, adding to its environmental sustainability.
Applications
The BSS138DW-7-F-79 is ideal for a variety of applications, including:
- Power Management: Its low on-resistance and fast switching speed make it suitable for high-efficiency power management circuits.
- Load Switching: The FET can be used as a load switch in various electronic devices due to its low gate threshold voltage and fast switching characteristics.
- General Switching Applications: It is versatile and can be used in any application requiring a reliable and efficient N-channel FET.
Q & A
- What is the drain to source voltage (Vdss) of the BSS138DW-7-F-79?
The drain to source voltage (Vdss) is 50V. - What is the maximum continuous drain current (Id) at 25°C?
The maximum continuous drain current (Id) at 25°C is 200mA. - What is the gate threshold voltage (Vgs(th)) range?
The gate threshold voltage (Vgs(th)) range is from 0.5V to 1.5V. - What is the maximum gate source voltage (Vgs)?
The maximum gate source voltage (Vgs) is ±20V. - What is the on-state resistance (Rds On) at Vgs = 10V and Id = 220mA?
The on-state resistance (Rds On) at Vgs = 10V and Id = 220mA is 3.5Ω. - What is the input capacitance (Ciss) at Vds = 10V?
The input capacitance (Ciss) at Vds = 10V is 50 pF. - What is the maximum power dissipation (Pd) at Ta = 25°C?
The maximum power dissipation (Pd) at Ta = 25°C is 200 mW. - What is the operating temperature range of the BSS138DW-7-F-79?
The operating temperature range is from -55°C to 150°C. - Is the BSS138DW-7-F-79 RoHS compliant?
Yes, the BSS138DW-7-F-79 is fully RoHS compliant. - What is the package type of the BSS138DW-7-F-79?
The package type is SOT363.
