Overview
The FDS8858CZ by onsemi is a dual N and P-Channel enhancement mode power MOSFET, produced using ON Semiconductor's advanced PowerTrench process. This component is designed to handle high-performance applications with its robust features. It operates with a drain-source voltage of 30V for the N-Channel and -30V for the P-Channel, and it can handle maximum drain currents of 8.6A and -7.3A respectively. The MOSFET is packaged in a compact, surface mount, Small Outline (SO) 8-pin form factor and is certified as RoHS compliant with a moisture sensitivity level of 1.
Key Specifications
| Parameter | N-Channel | P-Channel |
|---|---|---|
| Drain-Source Voltage (Vds) | 30V | -30V |
| Maximum Drain Current (Id) | 8.6A | -7.3A |
| On-State Resistance (rDS(on)) | 17.0 mΩ at Vgs = 10V, 20 mΩ at Vgs = 4.5V | 20.5 mΩ |
| Power Dissipation (Pd) | 2.0 W (dual operation), 1.6 W (single operation at TA = 25°C) | |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 °C | |
| Thermal Resistance, Junction to Case (RθJC) | 40 °C/W | |
| Thermal Resistance, Junction to Ambient (RθJA) | 78 °C/W (on a 0.5 in^2 pad of 2 oz copper) | |
| Gate-Source Voltage (Vgs) | ±25V | ±20V |
| Gate Charge (Qg) | 46 nC | 24 nC |
Key Features
- Dual N and P-Channel configuration for balanced performance.
- Low on-state resistance (rDS(on)) of 17.0 mΩ for the N-Channel and 20.5 mΩ for the P-Channel, reducing energy wastage and enhancing system efficiency.
- High current handling capability with maximum drain currents of 8.6A and -7.3A.
- Compact SO-8 package suitable for surface mount applications.
- RoHS compliant and moisture sensitivity level 1, ensuring environmental resilience and compliance with global regulations.
- High operating temperature range up to 150°C, making it suitable for demanding applications.
Applications
- Energy and Power Systems: The FDS8858CZ can be used in power supply systems, converters, and inverters to enhance efficiency and minimize losses.
- Transportation and Logistics: It is suitable for power management systems in electric vehicles, helping to optimize battery use and extend vehicle range.
- Renewable Energy: Applications such as solar inverters can benefit from its high performance and efficiency in handling significant voltage and current levels under variable conditions.
Q & A
- What is the maximum drain-source voltage for the FDS8858CZ?
The maximum drain-source voltage is 30V for the N-Channel and -30V for the P-Channel.
- What are the maximum drain currents for the N and P-Channels?
The maximum drain current is 8.6A for the N-Channel and -7.3A for the P-Channel.
- What is the on-state resistance (rDS(on)) for the N and P-Channels?
The on-state resistance is 17.0 mΩ at Vgs = 10V and 20 mΩ at Vgs = 4.5V for the N-Channel, and 20.5 mΩ for the P-Channel.
- What is the thermal resistance, junction to ambient (RθJA), for the FDS8858CZ?
The thermal resistance, junction to ambient (RθJA), is 78 °C/W when mounted on a 0.5 in^2 pad of 2 oz copper.
- Is the FDS8858CZ RoHS compliant?
Yes, the FDS8858CZ is RoHS compliant and has a moisture sensitivity level of 1.
- What is the operating temperature range for the FDS8858CZ?
The operating temperature range is -55 to +150 °C.
- What package type is the FDS8858CZ available in?
The FDS8858CZ is available in a Small Outline (SO) 8-pin package.
- What are some typical applications for the FDS8858CZ?
Typical applications include energy and power systems, transportation and logistics (especially electric vehicles), and renewable energy systems such as solar inverters.
- Where can I purchase the FDS8858CZ?
The FDS8858CZ can be purchased from reliable distributors such as Wuhan P&S, New Advantage Corporation, Master Electronics, and LCSC. You can check availability and pricing on findchips.com.
- What is the gate charge (Qg) for the N and P-Channels?
The gate charge is 46 nC for the N-Channel and 24 nC for the P-Channel.
