Overview
The FDG6321C is a dual N and P-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. It utilizes onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. This device is particularly suited for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. The absence of required bias resistors allows the FDG6321C to replace multiple digital transistors with different bias resistor values, making it a versatile component in various electronic circuits.
Key Specifications
| Parameter | N-Channel | P-Channel | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | -25 | V |
| Gate-Source Voltage (VGSS) | 8 | -8 | V |
| Continuous Drain Current (ID) | 0.5 | -0.41 | A |
| Pulsed Drain Current (ID) | 1.5 | -1.2 | A |
| Maximum Power Dissipation (PD) | 0.3 | W | |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | °C | |
| Electrostatic Discharge Rating (ESD) | 6 kV (Human Body Model) | ||
| Gate Threshold Voltage (VGS(th)) | 0.65 - 1.5 | -0.65 - -1.5 | V |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V | 0.45 Ω | 1.1 Ω | Ω |
| On-State Resistance (RDS(ON)) at VGS = 2.7 V | 0.60 Ω | 1.5 Ω | Ω |
Key Features
- Very small package outline: SC70-6
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-source Zener for ESD ruggedness (>6 kV Human Body Model)
- Pb-free and RoHS compliant
- No bias resistors required, making it a versatile replacement for multiple digital transistors
Applications
The FDG6321C is suitable for a variety of low voltage applications, including but not limited to:
- Replacement for bipolar digital transistors and small signal MOSFETs
- Logic level switching circuits
- Low voltage power management systems
- Portable electronic devices
- Automotive and industrial control systems
Q & A
- What is the FDG6321C? The FDG6321C is a dual N and P-channel logic level enhancement mode field effect transistor produced by onsemi.
- What technology is used in the FDG6321C? It uses onsemi's proprietary high cell density DMOS technology.
- What are the typical on-state resistances for the N and P channels? For the N-channel, RDS(ON) is 0.45 Ω at VGS = 4.5 V and 0.60 Ω at VGS = 2.7 V. For the P-channel, RDS(ON) is 1.1 Ω at VGS = -4.5 V and 1.5 Ω at VGS = -2.7 V.
- What is the maximum continuous drain current for the N and P channels? The maximum continuous drain current is 0.5 A for the N-channel and -0.41 A for the P-channel.
- Is the FDG6321C ESD rugged? Yes, it has a gate-source Zener for ESD ruggedness with a rating of >6 kV Human Body Model.
- What is the operating temperature range of the FDG6321C? The operating and storage temperature range is -55 to 150°C.
- Is the FDG6321C Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What package types are available for the FDG6321C? It is available in SC-88, SC70-6, and SOT-363 packages.
- What are some common applications of the FDG6321C? It is commonly used in low voltage applications, logic level switching circuits, portable electronic devices, and automotive and industrial control systems.
- Does the FDG6321C require bias resistors? No, bias resistors are not required, making it a versatile replacement for multiple digital transistors.
