FDG6321C
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onsemi FDG6321C

Manufacturer No:
FDG6321C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 25V 500/410MA SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDG6321C is a dual N and P-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. It utilizes onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. This device is particularly suited for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. The absence of required bias resistors allows the FDG6321C to replace multiple digital transistors with different bias resistor values, making it a versatile component in various electronic circuits.

Key Specifications

ParameterN-ChannelP-ChannelUnits
Drain-Source Voltage (VDSS)25-25V
Gate-Source Voltage (VGSS)8-8V
Continuous Drain Current (ID)0.5-0.41A
Pulsed Drain Current (ID)1.5-1.2A
Maximum Power Dissipation (PD)0.3W
Operating and Storage Temperature Range (TJ, TSTG)-55 to 150°C
Electrostatic Discharge Rating (ESD)6 kV (Human Body Model)
Gate Threshold Voltage (VGS(th))0.65 - 1.5-0.65 - -1.5V
On-State Resistance (RDS(ON)) at VGS = 4.5 V0.45 Ω1.1 ΩΩ
On-State Resistance (RDS(ON)) at VGS = 2.7 V0.60 Ω1.5 ΩΩ

Key Features

  • Very small package outline: SC70-6
  • Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
  • Gate-source Zener for ESD ruggedness (>6 kV Human Body Model)
  • Pb-free and RoHS compliant
  • No bias resistors required, making it a versatile replacement for multiple digital transistors

Applications

The FDG6321C is suitable for a variety of low voltage applications, including but not limited to:

  • Replacement for bipolar digital transistors and small signal MOSFETs
  • Logic level switching circuits
  • Low voltage power management systems
  • Portable electronic devices
  • Automotive and industrial control systems

Q & A

  1. What is the FDG6321C? The FDG6321C is a dual N and P-channel logic level enhancement mode field effect transistor produced by onsemi.
  2. What technology is used in the FDG6321C? It uses onsemi's proprietary high cell density DMOS technology.
  3. What are the typical on-state resistances for the N and P channels? For the N-channel, RDS(ON) is 0.45 Ω at VGS = 4.5 V and 0.60 Ω at VGS = 2.7 V. For the P-channel, RDS(ON) is 1.1 Ω at VGS = -4.5 V and 1.5 Ω at VGS = -2.7 V.
  4. What is the maximum continuous drain current for the N and P channels? The maximum continuous drain current is 0.5 A for the N-channel and -0.41 A for the P-channel.
  5. Is the FDG6321C ESD rugged? Yes, it has a gate-source Zener for ESD ruggedness with a rating of >6 kV Human Body Model.
  6. What is the operating temperature range of the FDG6321C? The operating and storage temperature range is -55 to 150°C.
  7. Is the FDG6321C Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  8. What package types are available for the FDG6321C? It is available in SC-88, SC70-6, and SOT-363 packages.
  9. What are some common applications of the FDG6321C? It is commonly used in low voltage applications, logic level switching circuits, portable electronic devices, and automotive and industrial control systems.
  10. Does the FDG6321C require bias resistors? No, bias resistors are not required, making it a versatile replacement for multiple digital transistors.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:500mA, 410mA
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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Similar Products

Part Number FDG6321C FDG6322C FDC6321C FDG6320C
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
FET Type N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V 25V 25V
Current - Continuous Drain (Id) @ 25°C 500mA, 410mA 220mA, 410mA 680mA, 460mA 220mA, 140mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V 4Ohm @ 220mA, 4.5V 450mOhm @ 500mA, 4.5V 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V 0.4nC @ 4.5V 2.3nC @ 5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V 9.5pF @ 10V 50pF @ 10V 9.5pF @ 10V
Power - Max 300mW 300mW 700mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT-23-6 Thin, TSOT-23-6 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-88 (SC-70-6) SuperSOT™-6 SC-88 (SC-70-6)

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