FDC6321C
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onsemi FDC6321C

Manufacturer No:
FDC6321C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 25V SSOT-6
Delivery:
Payment:
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Product Introduction

Overview

The FDC6321C is a dual N and P channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This component utilizes onsemi's proprietary, high cell density, DMOS technology, ensuring high performance and reliability. The FDC6321C is packaged in a 6-pin SOT-23 package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Channel TypeDual N & P Channel
Package Type6-Pin SOT-23
Drain-Source Voltage (Vds)25 V
Continuous Drain Current (Id)N-Channel: 460 mA, P-Channel: 680 mA
Gate-Source Voltage (Vgs)±20 V
Threshold Voltage (Vth)N-Channel: 0.8 V to 2.5 V, P-Channel: -0.8 V to -2.5 V
Operating Temperature Range-55°C to +150°C

Key Features

  • Logic level enhancement mode operation for easy interface with logic circuits.
  • High cell density DMOS technology for improved performance and reliability.
  • Low on-resistance (Rds(on)) for reduced power losses.
  • Compact 6-pin SOT-23 package for space-saving designs.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The FDC6321C is versatile and can be used in various applications, including:

  • Power management and switching circuits.
  • Motor control and drive systems.
  • Audio and video switching.
  • General-purpose switching and amplification.
  • Automotive and industrial control systems.

Q & A

  1. What is the package type of the FDC6321C?
    The FDC6321C is packaged in a 6-pin SOT-23 package.
  2. What are the continuous drain currents for the N and P channels?
    The continuous drain current for the N-channel is 460 mA, and for the P-channel, it is 680 mA.
  3. What is the maximum drain-source voltage (Vds) for the FDC6321C?
    The maximum drain-source voltage (Vds) is 25 V.
  4. What is the operating temperature range of the FDC6321C?
    The operating temperature range is from -55°C to +150°C.
  5. What technology is used in the FDC6321C?
    The FDC6321C uses onsemi's proprietary, high cell density, DMOS technology.
  6. What are some common applications of the FDC6321C?
    Common applications include power management, motor control, audio and video switching, general-purpose switching, and automotive and industrial control systems.
  7. What is the threshold voltage range for the N and P channels?
    The threshold voltage range for the N-channel is 0.8 V to 2.5 V, and for the P-channel, it is -0.8 V to -2.5 V.
  8. Is the FDC6321C suitable for logic level applications?
    Yes, the FDC6321C is designed for logic level enhancement mode operation, making it suitable for easy interface with logic circuits.
  9. What is the gate-source voltage (Vgs) rating for the FDC6321C?
    The gate-source voltage (Vgs) rating is ±20 V.
  10. Where can I find detailed specifications for the FDC6321C?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser and RS Components.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:680mA, 460mA
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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Similar Products

Part Number FDC6321C FDC6322C FDG6321C FDC6327C FDC6320C
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Active Active Active
FET Type N and P-Channel N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V 25V 20V 25V
Current - Continuous Drain (Id) @ 25°C 680mA, 460mA 220mA, 460mA 500mA, 410mA 2.7A, 1.9A 220mA, 120mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V 4Ohm @ 400mA, 4.5V 450mOhm @ 500mA, 4.5V 80mOhm @ 2.7A, 4.5V 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 5V 0.7nC @ 4.5V 2.3nC @ 4.5V 4.5nC @ 4.5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V 9.5pF @ 10V 50pF @ 10V 325pF @ 10V 9.5pF @ 10V
Power - Max 700mW 700mW 300mW 700mW 700mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 6-TSSOP, SC-88, SOT-363 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SC-88 (SC-70-6) SuperSOT™-6 SuperSOT™-6

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