NTJD4401NT1G
  • Share:

onsemi NTJD4401NT1G

Manufacturer No:
NTJD4401NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 630MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJD4401NT1G is a small signal MOSFET produced by onsemi. This dual N-channel MOSFET is designed for a variety of applications requiring low power consumption and high reliability. It is packaged in a SC-88 (SOT-363) package, which is compact and suitable for space-constrained designs. The device is known for its ESD protection, making it robust against electrostatic discharge.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)350 mA
RDS(on) (On-Resistance)1.2 Ω (Typical at VGS = 4.5 V)
PD (Power Dissipation)250 mW
TJ (Junction Temperature)-55 to 150 °C
PackageSC-88 (SOT-363)

Key Features

  • Dual N-channel configuration for versatile application use.
  • Low on-resistance (RDS(on)) of 1.2 Ω (typical at VGS = 4.5 V) for efficient switching.
  • ESD protection to enhance device reliability.
  • Compact SC-88 (SOT-363) package suitable for space-constrained designs.
  • Wide operating temperature range from -55 °C to 150 °C.

Applications

The NTJD4401NT1G is suitable for a variety of applications, including:

  • Low power switching circuits.
  • Audio and video switching.
  • Power management in portable electronics.
  • General-purpose analog and digital circuits.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTJD4401NT1G?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the typical on-resistance (RDS(on)) of the NTJD4401NT1G?
    The typical on-resistance (RDS(on)) is 1.2 Ω at VGS = 4.5 V.
  3. What is the package type of the NTJD4401NT1G?
    The package type is SC-88 (SOT-363).
  4. Does the NTJD4401NT1G have ESD protection?
    Yes, the NTJD4401NT1G has built-in ESD protection.
  5. What is the continuous drain current (ID) of the NTJD4401NT1G?
    The continuous drain current (ID) is 350 mA.
  6. What is the operating temperature range of the NTJD4401NT1G?
    The operating temperature range is from -55 °C to 150 °C.
  7. What are some common applications of the NTJD4401NT1G?
    Common applications include low power switching circuits, audio and video switching, power management in portable electronics, and general-purpose analog and digital circuits.
  8. Where can I find detailed specifications for the NTJD4401NT1G?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the onsemi official website.
  9. Is the NTJD4401NT1G suitable for automotive applications?
    Yes, the NTJD4401NT1G is suitable for automotive and industrial control systems due to its robust specifications and ESD protection.
  10. What is the power dissipation (PD) of the NTJD4401NT1G?
    The power dissipation (PD) is 250 mW.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:630mA
Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
Power - Max:270mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

$0.43
262

Please send RFQ , we will respond immediately.

Same Series
NVJD4401NT1G
NVJD4401NT1G
MOSFET 2N-CH 20V 0.63A SC88
NTJD4401NT1
NTJD4401NT1
MOSFET 2N-CH 20V 0.63A SOT363
NTJD4401NT2G
NTJD4401NT2G
MOSFET 2N-CH 20V 0.63A SOT363
NTJD4401NT4
NTJD4401NT4
MOSFET 2N-CH 20V 0.63A SOT363
NTJD4401NT4G
NTJD4401NT4G
MOSFET 2N-CH 20V 0.63A SOT363

Similar Products

Part Number NTJD4401NT1G NTJD4401NT2G NTJD4401NT4G NTJD4001NT1G NTJD4401NT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V 30V 20V
Current - Continuous Drain (Id) @ 25°C 630mA 630mA 630mA 250mA 630mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V 375mOhm @ 630mA, 4.5V 375mOhm @ 630mA, 4.5V 1.5Ohm @ 10mA, 4V 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 100µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V 3nC @ 4.5V 3nC @ 4.5V 1.3nC @ 5V 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V 46pF @ 20V 46pF @ 20V 33pF @ 5V 46pF @ 20V
Power - Max 270mW 270mW 270mW 272mW 270mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

IRF7341TRPBF
IRF7341TRPBF
Infineon Technologies
MOSFET 2N-CH 55V 4.7A 8-SOIC
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
CSD87588N
CSD87588N
Texas Instruments
MOSFET 2N-CH 30V 25A 5PTAB
BSS138AKDW-TP
BSS138AKDW-TP
Micro Commercial Co
DUAL N-CHANNEL MOSFET, SOT-363
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
BUK9K29-100E,115
BUK9K29-100E,115
Nexperia USA Inc.
MOSFET 2N-CH 100V 30A LFPAK56D
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
PMV20XNEA,215
PMV20XNEA,215
Nexperia USA Inc.
6.3A, 20V, N CHANNEL, SILICON, M
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
2N7002PSZ
2N7002PSZ
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
NVMD3P03R2G
NVMD3P03R2G
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC