IRF7341TRPBF
  • Share:

Infineon Technologies IRF7341TRPBF

Manufacturer No:
IRF7341TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 55V 4.7A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7341TRPBF is a high-performance power MOSFET produced by Infineon Technologies. This device is part of Infineon's OptiMOS™ family, known for its high efficiency, low on-resistance, and robust reliability. The IRF7341TRPBF is designed to meet the demanding requirements of modern power electronics, offering superior switching characteristics and thermal performance. It is widely used in various applications such as DC-DC converters, motor control, and power supplies.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)100V
VGS (Gate-Source Voltage)±20V
ID (Continuous Drain Current)150A
RDS(on) (On-Resistance)2.5
PD (Power Dissipation)280W
TJ (Junction Temperature)-55 to 150°C
PackageTO-263 (D2PAK)

Key Features

  • High current handling capability up to 150 A
  • Low on-resistance (RDS(on)) of 2.5 mΩ
  • High power dissipation of 280 W
  • Wide operating temperature range from -55°C to 150°C
  • TO-263 (D2PAK) package for efficient heat dissipation
  • Optimized for high-frequency switching applications
  • Robust against electrical overstress and thermal stress

Applications

  • DC-DC converters and power supplies
  • Motor control and drive systems
  • High-power audio amplifiers
  • Server and data center power systems
  • Automotive and industrial power electronics

Q & A

  1. What is the maximum drain-source voltage of the IRF7341TRPBF?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of the IRF7341TRPBF?
    The continuous drain current (ID) is 150 A.
  3. What is the on-resistance (RDS(on)) of the IRF7341TRPBF?
    The on-resistance (RDS(on)) is 2.5 mΩ.
  4. What is the package type of the IRF7341TRPBF?
    The package type is TO-263 (D2PAK).
  5. What are the typical applications of the IRF7341TRPBF?
    Typical applications include DC-DC converters, motor control, high-power audio amplifiers, server and data center power systems, and automotive and industrial power electronics.
  6. What is the operating temperature range of the IRF7341TRPBF?
    The operating temperature range is from -55°C to 150°C.
  7. How much power can the IRF7341TRPBF dissipate?
    The IRF7341TRPBF can dissipate up to 280 W of power.
  8. Is the IRF7341TRPBF suitable for high-frequency switching applications?
    Yes, it is optimized for high-frequency switching applications.
  9. What family does the IRF7341TRPBF belong to?
    The IRF7341TRPBF belongs to Infineon's OptiMOS™ family.
  10. Where can I find detailed specifications for the IRF7341TRPBF?
    Detailed specifications can be found on Infineon's official website, as well as on distributor websites such as Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:4.7A
Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

$1.26
455

Please send RFQ , we will respond immediately.

Same Series
IRF7341PBF
IRF7341PBF
MOSFET 2N-CH 55V 4.7A 8-SOIC

Similar Products

Part Number IRF7341TRPBF IRF7343TRPBF IRF7342TRPBF IRF7351TRPBF IRF7301TRPBF IRF7311TRPBF IRF7331TRPBF IRF7341GTRPBF IRF7341QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Last Time Buy Last Time Buy Obsolete Active Obsolete
FET Type 2 N-Channel (Dual) N and P-Channel 2 P-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V 55V 60V 20V 20V 20V 55V 55V
Current - Continuous Drain (Id) @ 25°C 4.7A 4.7A, 3.4A 3.4A 8A 5.2A 6.6A 7A 5.1A 5.1A
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V 105mOhm @ 3.4A, 10V 17.8mOhm @ 8A, 10V 50mOhm @ 2.6A, 4.5V 29mOhm @ 6A, 4.5V 30mOhm @ 7A, 4.5V 50mOhm @ 5.1A, 10V 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 4V @ 50µA 700mV @ 250µA 700mV @ 250µA 1.2V @ 250µA 1V @ 250µA (Min) 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 36nC @ 10V 38nC @ 10V 36nC @ 10V 20nC @ 4.5V 27nC @ 4.5V 20nC @ 4.5V 44nC @ 10V 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V 740pF @ 25V 690pF @ 25V 1330pF @ 30V 660pF @ 15V 900pF @ 15V 1340pF @ 16V 780pF @ 25V 780pF @ 25V
Power - Max 2W 2W 2W 2W 2W 2W 2W 2.4W 2.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO

Related Product By Categories

PMGD290XN,115
PMGD290XN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
FDC6327C
FDC6327C
onsemi
MOSFET N/P-CH 20V SSOT-6
BSS138BKSH
BSS138BKSH
Nexperia USA Inc.
BSS138BKS/SOT363/SC-88
STL7DN6LF3
STL7DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
NVMFD5C466NLWFT1G
NVMFD5C466NLWFT1G
onsemi
MOSFET 2N-CH 40V 52A S08FL
BSS84DW-7-F
BSS84DW-7-F
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS8402DW-7-F
BSS8402DW-7-F
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
BSS8402DWQ-13
BSS8402DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
MCH6661-TL-W
MCH6661-TL-W
onsemi
MOSFET 2N-CH 30V 1.8A SOT363
PMGD175XNEAX
PMGD175XNEAX
Nexperia USA Inc.
MOSFET 2 N-CH 30V 900MA SOT363
FDG6332C-PG
FDG6332C-PG
onsemi
MOSFET N P-CH 20V SC70-6

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847B-E6327
BC847B-E6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC850CE6327
BC850CE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3