Overview
The BC847SE6433BTMA1 is an NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a SOT-23 case, making it suitable for surface mount technology (SMT) applications. The BC847SE6433BTMA1 is designed for general-purpose use, particularly in switching and amplifier circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 50 | V |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 100 | mA |
| Power Dissipation (PD) | 310 | mW |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 403 | °C/W |
| Frequency | 250 | MHz |
| Package | SOT23 | |
| Mounting | SMD |
Key Features
- High current gain, with a typical DC current gain (hFE) ranging from 110 to 800.
- Low collector-emitter saturation voltage, ensuring efficient operation in switching and amplifier applications.
- Low noise characteristics between 30 Hz and 15 kHz, making it suitable for audio frequency (AF) input stages and driver applications.
- Pb-free (RoHS compliant) package, ensuring environmental compliance.
- Qualified according to AEC Q101, which is a standard for automotive electronic components, though note that some variants may not meet this qualification.
Applications
- Audio frequency (AF) input stages and driver applications due to its low noise characteristics.
- General-purpose switching and amplifier circuits in various electronic devices.
- Automotive electronics, given its qualification to AEC Q101 standards for many variants.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC847SE6433BTMA1 transistor? The collector-emitter voltage (VCEO) is 45V.
- What is the typical DC current gain (hFE) of this transistor? The typical DC current gain (hFE) ranges from 110 to 800.
- What is the power dissipation (PD) of the BC847SE6433BTMA1? The power dissipation (PD) is 310 mW.
- What is the junction temperature (TJ) of this transistor? The junction temperature (TJ) is 150°C.
- Is the BC847SE6433BTMA1 RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What are the potential applications of the BC847SE6433BTMA1 transistor? It is suitable for AF input stages, driver applications, and general-purpose switching and amplifier circuits.
- What is the package type of the BC847SE6433BTMA1 transistor? It is packaged in a SOT23 case.
- What is the mounting type of this transistor? It is a surface mount device (SMD).
- Is the BC847SE6433BTMA1 qualified according to AEC Q101? Yes, it is qualified according to AEC Q101, though some variants may not meet this qualification.
- What is the frequency range of the BC847SE6433BTMA1 transistor? The frequency is up to 250 MHz.
