BC857B E6327
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Infineon Technologies BC857B E6327

Manufacturer No:
BC857B E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857B E6327 is a PNP small signal bipolar transistor manufactured by Infineon Technologies. It is part of the BC857 series, known for its high performance and reliability in various electronic applications. This transistor is housed in a SOT-23 package, making it suitable for surface mount technology (SMT) and compact designs.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Base Voltage (VCEO)45V
Collector Current (IC)0.1A
Power Dissipation (PD)330mW
PackageSOT-23
Mounting TypeSurface Mount
RoHS ComplianceYes

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types available (BC847-BC850 for NPN)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101

Applications

The BC857B E6327 is suitable for various applications, including:

  • AF input stages
  • Driver applications
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the collector-base voltage of the BC857B E6327?
    The collector-base voltage (VCEO) is 45V.
  2. What is the maximum collector current of the BC857B E6327?
    The maximum collector current (IC) is 0.1A.
  3. What package type does the BC857B E6327 use?
    The BC857B E6327 is housed in a SOT-23 package.
  4. Is the BC857B E6327 RoHS compliant?
    Yes, the BC857B E6327 is RoHS compliant.
  5. What are the key features of the BC857B E6327?
    The key features include high current gain, low collector-emitter saturation voltage, low noise, and a Pb-free package.
  6. What are the potential applications of the BC857B E6327?
    Potential applications include AF input stages, driver applications, and general-purpose switching and amplification.
  7. Is the BC857B E6327 qualified for automotive use?
    Yes, it is qualified according to AEC Q101.
  8. What is the power dissipation of the BC857B E6327?
    The power dissipation (PD) is 330mW.
  9. Can the BC857B E6327 be used in life-endangering applications?
    No, it is not recommended for use in life-endangering applications such as medical, nuclear, or military applications.
  10. Where can I find detailed reliability and failure rate information for the BC857B E6327?
    Detailed reliability and failure rate information can be found in the FIT Report provided by Infineon Technologies.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC857B E6327 BC857BWE6327 BC857BE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23

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