BC857BE6327
  • Share:

Infineon Technologies BC857BE6327

Manufacturer No:
BC857BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BE6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of electronic circuits, particularly in automotive and other applications requiring high reliability. It is part of the BC857 series, known for its high current gain and low noise characteristics. The BC857BE6327 is packaged in a SOT-23 format, making it suitable for surface mount technology (SMT) and offering a compact solution for modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Maximum Collector Emitter Voltage45V
Maximum Emitter Base Voltage5V
Maximum Collector Current0.1A
Maximum Power Dissipation330mW
Operating Temperature Range-65 to 150°C
Package TypeSOT-23
Lead ShapeGull-wing
Package Dimensions1.3 x 2.9 x 1 mm
AEC-Q101 QualifiedYes
Pb-free (RoHS compliant)Yes

Key Features

  • High current gain, with a typical DC current gain (hFE) of 125 to 420.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.3 to 0.65 V.
  • Low noise characteristics between 30 Hz and 15 kHz.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Compact SOT-23 package, ideal for surface mount technology (SMT).

Applications

The BC857BE6327 is versatile and can be used in various electronic circuits, including:

  • Audio frequency (AF) input stages and driver applications.
  • Automotive electronics due to its AEC-Q101 qualification.
  • General-purpose switching and amplification circuits.
  • Low noise amplifier circuits.

Q & A

  1. What is the maximum collector emitter voltage of the BC857BE6327?
    The maximum collector emitter voltage is 45 V.
  2. What is the package type of the BC857BE6327?
    The package type is SOT-23.
  3. Is the BC857BE6327 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the typical DC current gain (hFE) of the BC857BE6327?
    The typical DC current gain (hFE) ranges from 125 to 420.
  5. What are the operating temperature limits of the BC857BE6327?
    The operating temperature range is from -65°C to 150°C.
  6. Is the BC857BE6327 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  7. What are some common applications of the BC857BE6327?
    Common applications include AF input stages, driver applications, and automotive electronics.
  8. What is the maximum power dissipation of the BC857BE6327?
    The maximum power dissipation is 330 mW.
  9. What is the lead shape of the BC857BE6327?
    The lead shape is gull-wing.
  10. What are the dimensions of the BC857BE6327 package?
    The package dimensions are 1.3 x 2.9 x 1 mm.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
396

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC857BE6327 BC857BWE6327 BC857AE6327 BC857B E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 250 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23 PG-SOT23

Related Product By Categories

BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAW56UE6327
BAW56UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV 99T E6433
BAV 99T E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC817K25WH6327XTSA1
BC817K25WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 846B E6327
BC 846B E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3