BC857BE6327
  • Share:

Infineon Technologies BC857BE6327

Manufacturer No:
BC857BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BE6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of electronic circuits, particularly in automotive and other applications requiring high reliability. It is part of the BC857 series, known for its high current gain and low noise characteristics. The BC857BE6327 is packaged in a SOT-23 format, making it suitable for surface mount technology (SMT) and offering a compact solution for modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Maximum Collector Emitter Voltage45V
Maximum Emitter Base Voltage5V
Maximum Collector Current0.1A
Maximum Power Dissipation330mW
Operating Temperature Range-65 to 150°C
Package TypeSOT-23
Lead ShapeGull-wing
Package Dimensions1.3 x 2.9 x 1 mm
AEC-Q101 QualifiedYes
Pb-free (RoHS compliant)Yes

Key Features

  • High current gain, with a typical DC current gain (hFE) of 125 to 420.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.3 to 0.65 V.
  • Low noise characteristics between 30 Hz and 15 kHz.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Compact SOT-23 package, ideal for surface mount technology (SMT).

Applications

The BC857BE6327 is versatile and can be used in various electronic circuits, including:

  • Audio frequency (AF) input stages and driver applications.
  • Automotive electronics due to its AEC-Q101 qualification.
  • General-purpose switching and amplification circuits.
  • Low noise amplifier circuits.

Q & A

  1. What is the maximum collector emitter voltage of the BC857BE6327?
    The maximum collector emitter voltage is 45 V.
  2. What is the package type of the BC857BE6327?
    The package type is SOT-23.
  3. Is the BC857BE6327 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the typical DC current gain (hFE) of the BC857BE6327?
    The typical DC current gain (hFE) ranges from 125 to 420.
  5. What are the operating temperature limits of the BC857BE6327?
    The operating temperature range is from -65°C to 150°C.
  6. Is the BC857BE6327 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  7. What are some common applications of the BC857BE6327?
    Common applications include AF input stages, driver applications, and automotive electronics.
  8. What is the maximum power dissipation of the BC857BE6327?
    The maximum power dissipation is 330 mW.
  9. What is the lead shape of the BC857BE6327?
    The lead shape is gull-wing.
  10. What are the dimensions of the BC857BE6327 package?
    The package dimensions are 1.3 x 2.9 x 1 mm.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
396

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC857BE6327 BC857BWE6327 BC857AE6327 BC857B E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 250 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23 PG-SOT23

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
TLE7368EXUMA1
TLE7368EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36