BC857BE6327
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Infineon Technologies BC857BE6327

Manufacturer No:
BC857BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BE6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of electronic circuits, particularly in automotive and other applications requiring high reliability. It is part of the BC857 series, known for its high current gain and low noise characteristics. The BC857BE6327 is packaged in a SOT-23 format, making it suitable for surface mount technology (SMT) and offering a compact solution for modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Maximum Collector Emitter Voltage45V
Maximum Emitter Base Voltage5V
Maximum Collector Current0.1A
Maximum Power Dissipation330mW
Operating Temperature Range-65 to 150°C
Package TypeSOT-23
Lead ShapeGull-wing
Package Dimensions1.3 x 2.9 x 1 mm
AEC-Q101 QualifiedYes
Pb-free (RoHS compliant)Yes

Key Features

  • High current gain, with a typical DC current gain (hFE) of 125 to 420.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.3 to 0.65 V.
  • Low noise characteristics between 30 Hz and 15 kHz.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Compact SOT-23 package, ideal for surface mount technology (SMT).

Applications

The BC857BE6327 is versatile and can be used in various electronic circuits, including:

  • Audio frequency (AF) input stages and driver applications.
  • Automotive electronics due to its AEC-Q101 qualification.
  • General-purpose switching and amplification circuits.
  • Low noise amplifier circuits.

Q & A

  1. What is the maximum collector emitter voltage of the BC857BE6327?
    The maximum collector emitter voltage is 45 V.
  2. What is the package type of the BC857BE6327?
    The package type is SOT-23.
  3. Is the BC857BE6327 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the typical DC current gain (hFE) of the BC857BE6327?
    The typical DC current gain (hFE) ranges from 125 to 420.
  5. What are the operating temperature limits of the BC857BE6327?
    The operating temperature range is from -65°C to 150°C.
  6. Is the BC857BE6327 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  7. What are some common applications of the BC857BE6327?
    Common applications include AF input stages, driver applications, and automotive electronics.
  8. What is the maximum power dissipation of the BC857BE6327?
    The maximum power dissipation is 330 mW.
  9. What is the lead shape of the BC857BE6327?
    The lead shape is gull-wing.
  10. What are the dimensions of the BC857BE6327 package?
    The package dimensions are 1.3 x 2.9 x 1 mm.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC857BE6327 BC857BWE6327 BC857AE6327 BC857B E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 250 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23 PG-SOT23

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