Overview
The IRFP250NPBF is a high-performance N-Channel Power MOSFET from Infineon Technologies, part of the Fifth Generation HEXFET family. This device is designed to offer advanced processing techniques, resulting in extremely low on-resistance per silicon area. It is packaged in a TO-247AC case, making it suitable for a wide range of high-power applications. The MOSFET is known for its fast switching capabilities, ease of paralleling, and simple drive requirements, making it a reliable choice for designers seeking robust and efficient power management solutions.
Key Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| Maximum Drain-Source Voltage (Vds) | 200 | V | |
| Maximum Drain Current (Id) | 30 | A | |
| Maximum Power Dissipation (Pd) | 214 | W | |
| Maximum Gate-Source Voltage (Vgs) | ±20 | V | |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 2.0 to 4.0 | V | Vds = 10 V, Id = 0.25 mA |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.075 | Ω | Vgs = 10 V |
| Total Gate Charge (Qg) | 123 | nC | |
| Output Capacitance (Coss) | 315 | pF | Vds = 25 V |
| Maximum Junction Temperature (Tj) | 175 | °C |
Key Features
- Advanced Process Technology: Utilizes fifth-generation HEXFET technology for low on-resistance and high efficiency.
- Fast Switching: Designed for fast switching applications with minimal intrinsic turn-on time.
- Fully Avalanche Rated: 100% avalanche tested to ensure robust performance under various conditions.
- Low Gate Drive Requirements: Easy to drive with simple gate drive circuits.
- Ease of Paralleling: Suitable for parallel operation due to its low on-resistance and minimal lot-to-lot variations.
- High Operating Temperature: Can operate up to a junction temperature of 175°C.
Applications
The IRFP250NPBF is ideal for various high-power applications, including:
- Switching Power Supplies: Suitable for high-efficiency switching power supplies due to its fast switching and low on-resistance.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
- Power Amplifiers: Can be used in power amplifier circuits requiring high current and low distortion.
- Automotive Systems: Applicable in automotive systems such as ABS (Anti-lock Braking System) and other high-power automotive applications.
Q & A
- What is the maximum drain-source voltage of the IRFP250NPBF?
The maximum drain-source voltage (Vds) is 200 V. - What is the maximum drain current of the IRFP250NPBF?
The maximum drain current (Id) is 30 A. - What is the maximum power dissipation of the IRFP250NPBF?
The maximum power dissipation (Pd) is 214 W. - What is the maximum gate-source voltage of the IRFP250NPBF?
The maximum gate-source voltage (Vgs) is ±20 V. - What is the typical on-state resistance of the IRFP250NPBF?
The typical on-state resistance (Rds(on)) is 0.075 Ω. - What is the total gate charge of the IRFP250NPBF?
The total gate charge (Qg) is 123 nC. - What is the output capacitance of the IRFP250NPBF?
The output capacitance (Coss) is 315 pF at Vds = 25 V. - What is the maximum junction temperature of the IRFP250NPBF?
The maximum junction temperature (Tj) is 175°C. - Is the IRFP250NPBF fully avalanche rated?
Yes, the IRFP250NPBF is 100% avalanche tested. - What type of packaging does the IRFP250NPBF use?
The IRFP250NPBF is packaged in a TO-247AC case.
