Overview
The IRFP250MPBF is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is part of Infineon's IR MOSFET™ family, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRFP250MPBF is designed for high-power applications requiring efficient switching and minimal power loss.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Continuous Drain Current (ID) at TC = 25°C, VGS = 10V | 30 | A |
| Continuous Drain Current (ID) at TC = 100°C, VGS = 10V | 18 | A |
| Drain-Source On-Resistance (Rds(on)) at VGS = 10V | 75 | mΩ |
| Maximum Drain-Source Voltage (Vds) | 200 | V |
| Maximum Gate-Source Voltage (Vgs) | 20 | V |
| Threshold Voltage (Vth) at ID = 250μA, Vds = 4V | 2-4 | V |
| Package Type | TO-247AC-3 | |
| Power Dissipation (Pd) | 214 | W |
Key Features
- Low on-resistance (Rds(on)) of 75 mΩ at VGS = 10V, contributing to high efficiency and reduced power loss.
- High continuous drain current (ID) of up to 30 A at TC = 25°C and 18 A at TC = 100°C.
- Maximum drain-source voltage (Vds) of 200 V, making it suitable for high-voltage applications.
- Advanced IR MOSFET™ technology for improved performance and reliability.
- TO-247AC-3 package, which is robust and suitable for high-power applications.
Applications
The IRFP250MPBF is ideal for various high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Aerospace and defense systems.
- Automotive systems requiring high reliability and efficiency.
Q & A
- What is the maximum continuous drain current of the IRFP250MPBF at 25°C?
The maximum continuous drain current is 30 A at TC = 25°C and VGS = 10V. - What is the on-resistance (Rds(on)) of the IRFP250MPBF?
The on-resistance is 75 mΩ at VGS = 10V. - What is the maximum drain-source voltage (Vds) of the IRFP250MPBF?
The maximum drain-source voltage is 200 V. - What package type is the IRFP250MPBF available in?
The IRFP250MPBF is available in the TO-247AC-3 package. - What is the power dissipation (Pd) of the IRFP250MPBF?
The power dissipation is 214 W. - What technology does the IRFP250MPBF use?
The IRFP250MPBF uses advanced IR MOSFET™ technology. - Is the IRFP250MPBF suitable for high-frequency switching applications?
Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high efficiency. - What is the threshold voltage (Vth) range of the IRFP250MPBF?
The threshold voltage range is 2-4 V at ID = 250μA and Vds = 4V. - Is the IRFP250MPBF RoHS compliant?
Yes, the IRFP250MPBF is RoHS compliant. - What are some typical applications of the IRFP250MPBF?
Typical applications include power supplies, motor control systems, high-frequency switching circuits, aerospace and defense systems, and automotive systems.
