Overview
The BAS70-06WE6327, produced by Infineon Technologies, is a member of the BAS70 series of Schottky barrier diodes. These diodes are designed for high-speed switching applications and are known for their low conduction losses, negligible switching losses, and low forward and reverse recovery times. The BAS70 series is packaged in various surface mount configurations, including SOT-23, which is the case for the BAS70-06WE6327.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 70 | V |
| Continuous Forward Current | IF | 70 | mA |
| Surge Non-Repetitive Forward Current (tp = 10 ms, Sinusoidal) | IFSM | 1 | A |
| Maximum Operating Junction Temperature | Tj | 150 | °C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Forward Voltage Drop (IF = 1 mA, Tj = 25 °C) | VF | 410 | mV |
| Forward Voltage Drop (IF = 10 mA, Tj = 25 °C) | VF | 750 | mV |
| Reverse Leakage Current (VR = 50 V, Tj = 25 °C) | IR | 100 nA | |
| Diode Capacitance (VR = 0 V, F = 1 MHz) | C | 2 | pF |
| Junction to Ambient Thermal Resistance (SOT-23 package) | Rth(j-a) | 500 | °C/W |
Key Features
- Low Conduction Losses: The BAS70-06WE6327 features very low forward voltage drop, reducing energy losses in high-speed switching applications.
- Negligible Switching Losses: With low forward and reverse recovery times, these diodes minimize switching losses, making them ideal for high-frequency applications.
- Low Capacitance and Inductance: The diode has low capacitance (2 pF) and series inductance (1.5 nH), which is beneficial for RF and high-speed applications.
- Surface Mount Package: Available in SOT-23 and other surface mount packages, making it suitable for compact and automated assembly processes.
- High Temperature Operation: The diode can operate up to a maximum junction temperature of 150 °C, ensuring reliability in demanding environments.
Applications
- RF Applications: The BAS70-06WE6327 is specially suited for signal detection and temperature compensation in RF circuits due to its low capacitance and inductance.
- High-Speed Switching: Ideal for applications requiring fast switching times, such as in power supplies, DC-DC converters, and other high-speed electronic circuits.
- Circuit Protection: Can be used for voltage clamping and circuit protection due to its high reverse voltage rating and low leakage current.
- Automotive and Industrial Electronics: Suitable for use in automotive and industrial environments where reliability and high temperature operation are critical.
Q & A
- What is the maximum reverse voltage rating of the BAS70-06WE6327?
The maximum repetitive peak reverse voltage (VRRM) is 70 V.
- What is the continuous forward current rating of the BAS70-06WE6327?
The continuous forward current (IF) is 70 mA.
- What is the maximum operating junction temperature of the BAS70-06WE6327?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the typical forward voltage drop at 10 mA?
The typical forward voltage drop (VF) at 10 mA is 750 mV.
- What is the diode capacitance at 1 MHz?
The diode capacitance (C) at 1 MHz is 2 pF.
- What are the common applications of the BAS70-06WE6327?
Common applications include RF circuits, high-speed switching, circuit protection, and automotive and industrial electronics.
- What is the storage temperature range for the BAS70-06WE6327?
The storage temperature range (Tstg) is -65 to +150 °C.
- What is the junction to ambient thermal resistance for the SOT-23 package?
The junction to ambient thermal resistance (Rth(j-a)) for the SOT-23 package is 500 °C/W.
- Is the BAS70-06WE6327 suitable for high-frequency applications?
Yes, it is suitable due to its low capacitance, low series inductance, and low forward and reverse recovery times.
- What package types are available for the BAS70 series?
The BAS70 series is available in various surface mount packages including SOT-23, SOT-323, SOD-123, and others.
