BSS84PH6327XTSA2
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Infineon Technologies BSS84PH6327XTSA2

Manufacturer No:
BSS84PH6327XTSA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 170MA SOT23-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSS84PH6327XTSA2, produced by Infineon Technologies, is a P-channel enhancement mode Field-Effect Transistor (FET) designed for small signal and small power applications. This component is part of Infineon's broad portfolio of N- and P-Channel Small Signal MOSFETs, known for their high quality and reliability. The BSS84P is packaged in a SOT-23 (PG-SOT23-3) package, making it suitable for a variety of applications where space is a concern.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS -60 V
Continuous Drain Current at TA=25°C ID -0.17 A
Pulsed Drain Current at TA=25°C ID,puls -0.68 A
Gate Threshold Voltage VGS(th) -1 to -2 V
Drain-Source On-State Resistance at VGS=-4.5V, ID=-0.14A RDS(on) 8 to 12 Ω
Drain-Source On-State Resistance at VGS=-10V, ID=-0.17A RDS(on) 5.8 to 8 Ω
Avalanche Energy, Single Pulse EAS 2.6 mJ
Package Type SOT-23 (PG-SOT23-3)

Key Features

  • Enhancement Mode: The BSS84P operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: This MOSFET is logic level, meaning it can be driven directly by logic circuits.
  • Avalanche Rated: The component is rated for avalanche energy, making it robust against transient conditions.
  • Fast Switching: It features fast switching times, which is crucial for high-frequency applications.
  • Dv/dt Rated: The MOSFET is rated for dv/dt, ensuring stability against rapid voltage changes.
  • Pb-free and RoHS Compliant: The component is lead-free and compliant with RoHS and halogen-free standards.
  • Qualified According to Automotive Standards: It meets automotive quality standards and is PPAP capable.
  • Low RDS(on): Provides higher efficiency and extends battery life.
  • Small Package: Saves PCB space due to its compact SOT-23 package.

Applications

  • LED Lighting: Suitable for LED lighting systems due to its low RDS(on) and fast switching capabilities.
  • ADAS (Advanced Driver Assistance Systems): Used in automotive ADAS systems for its reliability and compliance with automotive standards.
  • Body Control Units: Ideal for body control units in vehicles due to its small size and high efficiency.
  • SMPS (Switch-Mode Power Supplies): Applicable in SMPS designs for its fast switching and low on-state resistance.
  • Motor Control: Used in motor control applications requiring fast and efficient switching.

Q & A

  1. What is the drain-source voltage rating of the BSS84P?

    The drain-source voltage rating of the BSS84P is -60 V.

  2. What is the continuous drain current of the BSS84P at TA=25°C?

    The continuous drain current of the BSS84P at TA=25°C is -0.17 A.

  3. Is the BSS84P RoHS compliant?

    Yes, the BSS84P is RoHS compliant and halogen-free.

  4. What is the typical RDS(on) of the BSS84P at VGS=-4.5V and ID=-0.14A?

    The typical RDS(on) of the BSS84P at VGS=-4.5V and ID=-0.14A is 8 Ω.

  5. What are some common applications of the BSS84P?

    The BSS84P is commonly used in LED lighting, ADAS, body control units, SMPS, and motor control applications.

  6. Is the BSS84P qualified according to automotive standards?

    Yes, the BSS84P is qualified according to automotive standards and is PPAP capable.

  7. What is the package type of the BSS84P?

    The BSS84P is packaged in a SOT-23 (PG-SOT23-3) package.

  8. Does the BSS84P support fast switching?

    Yes, the BSS84P features fast switching times, making it suitable for high-frequency applications.

  9. What is the avalanche energy rating of the BSS84P?

    The avalanche energy rating of the BSS84P is 2.6 mJ for a single pulse.

  10. Is the BSS84P Pb-free?

    Yes, the BSS84P is Pb-free and has lead-plating.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84PH6433XTMA1
BSS84PH6433XTMA1
MOSFET P-CH 60V 170MA SOT23-3
BSS84PH6327XTSA1
BSS84PH6327XTSA1
MOSFET P-CH 60V 170MA SOT23-3

Similar Products

Part Number BSS84PH6327XTSA2 BSS84PH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 170mA, 10V 8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19 pF @ 25 V 19 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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