IPD50P04P4L11ATMA1
  • Share:

Infineon Technologies IPD50P04P4L11ATMA1

Manufacturer No:
IPD50P04P4L11ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 50A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPD50P04P4L11ATMA1 is a high-performance P-channel power MOSFET designed by Infineon Technologies. It is part of the OptiMOS™-P2 family and is optimized for automotive and industrial applications. This MOSFET features a low on-state resistance (RDS(on)) and high current capability, making it ideal for power management and conversion circuits. It is AEC qualified, has a maximum operating temperature of 175°C, and is RoHS compliant, ensuring environmental sustainability and reliability in various operating conditions.

Key Specifications

Parameter Symbol Conditions Unit Min. Max.
Continuous Drain Current I_D T_C=25°C, V_GS=-10V A - - -50
Pulsed Drain Current I_D,pulse T_C=25°C A - - -200
Avalanche Energy, Single Pulse E_AS I_D=-25A mJ - - 18
Avalanche Current, Single Pulse I_AS - A - - -50
Gate Source Voltage V_GS - V +5/-16 - -
Power Dissipation P_tot T_C=25°C W - - 58
Operating and Storage Temperature T_j, T_stg - °C -55 ... +175 - -
Drain-Source Breakdown Voltage V_(BR)DSS V_GS=0V, I_D=-1mA V -40 - -
Gate Threshold Voltage V_GS(th) V_DS=V_GS, I_D=-85µA V -1.2 -1.7 -2.2
Drain-Source On-State Resistance R_DS(on) V_GS=-10V, I_D=-50A - 8.2 10.6

Key Features

  • P-Channel, Logic Level, Enhancement Mode: Designed for high-performance switching applications with a logic-level gate drive.
  • AEC Qualified: Meets automotive electronics council standards for reliability and performance in automotive environments.
  • Low On-State Resistance (RDS(on)): Offers the world's lowest RDS(on) at 40V, minimizing conduction losses and enhancing thermal efficiency.
  • High Current Capability: Supports continuous drain current up to 50A and pulsed drain current up to 200A).
  • High Operating Temperature: Can operate up to 175°C, ensuring reliability in demanding thermal conditions).
  • Green Product (RoHS Compliant): Environmentally friendly and compliant with RoHS regulations).
  • 100% Avalanche Tested: Ensures robustness against avalanche conditions, critical for reverse battery protection and other high-stress applications).
  • Simple Interface Drive Circuit: No charge pump required for high-side drive, simplifying the drive circuitry).

Applications

  • High-Side MOSFETs for Motor Bridges: Suitable for half-bridges, H-bridges, and 3-phase motors due to its high current capability and low RDS(on)).
  • Automotive Power Management and Control: Ideal for automotive-grade performance in power management and control applications).
  • Power Conversion Circuits: Used in various power conversion circuits where high efficiency and reliability are crucial).
  • Reverse Battery Protection: Intended for reverse battery protection due to its robust avalanche characteristics).

Q & A

  1. Q: Is the IPD50P04P4L11ATMA1 suitable for automotive applications?

    A: Yes, the IPD50P04P4L11ATMA1 is designed for automotive-grade performance, making it suitable for automotive power management and control applications).

  2. Q: What is the maximum operating temperature of the IPD50P04P4L11ATMA1?

    A: The maximum operating temperature is 175°C).

  3. Q: What is the continuous drain current rating of the IPD50P04P4L11ATMA1?

    A: The continuous drain current rating is up to 50A at T_C=25°C and V_GS=-10V).

  4. Q: Is the IPD50P04P4L11ATMA1 RoHS compliant?

    A: Yes, the IPD50P04P4L11ATMA1 is RoHS compliant and considered a green product).

  5. Q: What is the on-state resistance (RDS(on)) of the IPD50P04P4L11ATMA1?

    A: The maximum RDS(on) is 10.6 mΩ at V_GS=-10V and I_D=-50A).

  6. Q: Does the IPD50P04P4L11ATMA1 require a charge pump for high-side drive?

    A: No, the IPD50P04P4L11ATMA1 does not require a charge pump for high-side drive, thanks to its simple interface drive circuit).

  7. Q: What are the typical applications of the IPD50P04P4L11ATMA1 in motor control?

    A: It is commonly used in high-side MOSFETs for motor bridges, including half-bridges, H-bridges, and 3-phase motors).

  8. Q: How is the IPD50P04P4L11ATMA1 packaged?

    A: The IPD50P04P4L11ATMA1 is available in the TO-252-3 package).

  9. Q: What is the gate threshold voltage range of the IPD50P04P4L11ATMA1?

    A: The gate threshold voltage range is from -1.2V to -2.2V).

  10. Q: Is the IPD50P04P4L11ATMA1 100% avalanche tested?

    A: Yes, the IPD50P04P4L11ATMA1 is 100% avalanche tested, ensuring robustness against avalanche conditions).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.80
511

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPD50P04P4L11ATMA1 IPD50P04P4L11ATMA2 IPD50P03P4L11ATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Not For New Designs
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 50A, 10V 10.6mOhm @ 50A, 10V 10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 85µA 2.2V @ 85µA 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±16V +5V, -16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 3900 pF @ 25 V 3770 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 58W (Tc) 58W (Tc) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW