Overview
The IPD50P04P4L11ATMA1 is a high-performance P-channel power MOSFET designed by Infineon Technologies. It is part of the OptiMOS™-P2 family and is optimized for automotive and industrial applications. This MOSFET features a low on-state resistance (RDS(on)) and high current capability, making it ideal for power management and conversion circuits. It is AEC qualified, has a maximum operating temperature of 175°C, and is RoHS compliant, ensuring environmental sustainability and reliability in various operating conditions.
Key Specifications
| Parameter | Symbol | Conditions | Unit | Min. | Max. | |
|---|---|---|---|---|---|---|
| Continuous Drain Current | I_D | T_C=25°C, V_GS=-10V | A | - | - | -50 |
| Pulsed Drain Current | I_D,pulse | T_C=25°C | A | - | - | -200 |
| Avalanche Energy, Single Pulse | E_AS | I_D=-25A | mJ | - | - | 18 |
| Avalanche Current, Single Pulse | I_AS | - | A | - | - | -50 |
| Gate Source Voltage | V_GS | - | V | +5/-16 | - | - |
| Power Dissipation | P_tot | T_C=25°C | W | - | - | 58 |
| Operating and Storage Temperature | T_j, T_stg | - | °C | -55 ... +175 | - | - |
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS=0V, I_D=-1mA | V | -40 | - | - |
| Gate Threshold Voltage | V_GS(th) | V_DS=V_GS, I_D=-85µA | V | -1.2 | -1.7 | -2.2 |
| Drain-Source On-State Resistance | R_DS(on) | V_GS=-10V, I_D=-50A | mΩ | - | 8.2 | 10.6 |
Key Features
- P-Channel, Logic Level, Enhancement Mode: Designed for high-performance switching applications with a logic-level gate drive.
- AEC Qualified: Meets automotive electronics council standards for reliability and performance in automotive environments.
- Low On-State Resistance (RDS(on)): Offers the world's lowest RDS(on) at 40V, minimizing conduction losses and enhancing thermal efficiency.
- High Current Capability: Supports continuous drain current up to 50A and pulsed drain current up to 200A).
- High Operating Temperature: Can operate up to 175°C, ensuring reliability in demanding thermal conditions).
- Green Product (RoHS Compliant): Environmentally friendly and compliant with RoHS regulations).
- 100% Avalanche Tested: Ensures robustness against avalanche conditions, critical for reverse battery protection and other high-stress applications).
- Simple Interface Drive Circuit: No charge pump required for high-side drive, simplifying the drive circuitry).
Applications
- High-Side MOSFETs for Motor Bridges: Suitable for half-bridges, H-bridges, and 3-phase motors due to its high current capability and low RDS(on)).
- Automotive Power Management and Control: Ideal for automotive-grade performance in power management and control applications).
- Power Conversion Circuits: Used in various power conversion circuits where high efficiency and reliability are crucial).
- Reverse Battery Protection: Intended for reverse battery protection due to its robust avalanche characteristics).
Q & A
- Q: Is the IPD50P04P4L11ATMA1 suitable for automotive applications?
A: Yes, the IPD50P04P4L11ATMA1 is designed for automotive-grade performance, making it suitable for automotive power management and control applications).
- Q: What is the maximum operating temperature of the IPD50P04P4L11ATMA1?
A: The maximum operating temperature is 175°C).
- Q: What is the continuous drain current rating of the IPD50P04P4L11ATMA1?
A: The continuous drain current rating is up to 50A at T_C=25°C and V_GS=-10V).
- Q: Is the IPD50P04P4L11ATMA1 RoHS compliant?
A: Yes, the IPD50P04P4L11ATMA1 is RoHS compliant and considered a green product).
- Q: What is the on-state resistance (RDS(on)) of the IPD50P04P4L11ATMA1?
A: The maximum RDS(on) is 10.6 mΩ at V_GS=-10V and I_D=-50A).
- Q: Does the IPD50P04P4L11ATMA1 require a charge pump for high-side drive?
A: No, the IPD50P04P4L11ATMA1 does not require a charge pump for high-side drive, thanks to its simple interface drive circuit).
- Q: What are the typical applications of the IPD50P04P4L11ATMA1 in motor control?
A: It is commonly used in high-side MOSFETs for motor bridges, including half-bridges, H-bridges, and 3-phase motors).
- Q: How is the IPD50P04P4L11ATMA1 packaged?
A: The IPD50P04P4L11ATMA1 is available in the TO-252-3 package).
- Q: What is the gate threshold voltage range of the IPD50P04P4L11ATMA1?
A: The gate threshold voltage range is from -1.2V to -2.2V).
- Q: Is the IPD50P04P4L11ATMA1 100% avalanche tested?
A: Yes, the IPD50P04P4L11ATMA1 is 100% avalanche tested, ensuring robustness against avalanche conditions).
