Overview
The IPD50P04P4L11ATMA2 is a high-performance P-channel power MOSFET from Infineon Technologies, part of their OptiMOS™-P2 family. This device is designed for automotive applications and is known for its exceptional electrical and thermal characteristics. It features a logic level enhancement mode and is AEC qualified, ensuring reliability and compliance with automotive standards. The MOSFET operates at a maximum junction temperature of 175°C and is RoHS compliant, making it a green product. It is also 100% avalanche tested, enhancing its robustness and reliability.
Key Specifications
| Parameter | Symbol | Conditions | Unit | Min. | Max. | |
|---|---|---|---|---|---|---|
| Continuous Drain Current | I_D | T_C=25°C, V_GS=-10V | A | - | - | -50 |
| Pulsed Drain Current | I_D,pulse | T_C=25°C | A | - | - | -200 |
| Avalanche Energy, Single Pulse | E_AS | I_D=-25A | mJ | - | - | 18 |
| Avalanche Current, Single Pulse | I_AS | - | A | - | - | -50 |
| Gate Source Voltage | V_GS | - | V | +5/-16 | - | - |
| Power Dissipation | P_tot | T_C=25°C | W | - | - | 58 |
| Operating and Storage Temperature | T_j, T_stg | - | °C | -55 ... +175 | - | - |
| Drain-Source On-State Resistance | R_DS(on) | V_GS=-10V, I_D=-50A | mΩ | - | 8.2 | 10.6 |
| Thermal Resistance, Junction - Case | R_thJC | - | K/W | - | - | 2.6 |
Key Features
- P-channel, Logic Level, Enhancement Mode: Designed for easy interface and high side drive without the need for a charge pump.
- AEC Qualified: Meets automotive standards for reliability and performance.
- High Operating Temperature: Up to 175°C, ensuring robust operation in demanding environments.
- Green Product (RoHS Compliant): Environmentally friendly and compliant with RoHS regulations.
- 100% Avalanche Tested: Ensures high robustness and reliability against avalanche conditions.
- Low R_DS(on): World's lowest R_DS(on) at 40V, minimizing switching and conduction losses.
- Simple Interface Drive Circuit: Easy to integrate into various applications.
- Robust Packages: Available in standard packages such as TO-252, TO-263, TO-220, and TO-262.
Applications
- High-Side MOSFETs for Motor Bridges: Suitable for half-bridges, H-bridges, and 3-phase motors in automotive and industrial applications.
- Reverse Battery Protection: Intended for protecting against reverse battery conditions in automotive systems.
- Electric Two-Wheeler Applications: Ideal for use in electric two-wheelers due to its high performance and reliability.
- 48V Mild-Hybrid Electric Vehicle (MHEV) Applications: Part of Infineon’s comprehensive portfolio for MHEV applications.
Q & A
- What is the maximum continuous drain current of the IPD50P04P4L11ATMA2 at 25°C?
The maximum continuous drain current is -50 A at T_C=25°C and V_GS=-10V.
- What is the maximum operating temperature of this MOSFET?
The maximum operating temperature is 175°C.
- Is the IPD50P04P4L11ATMA2 RoHS compliant?
Yes, it is RoHS compliant and considered a green product.
- What is the typical R_DS(on) value at V_GS=-10V and I_D=-50A?
The typical R_DS(on) value is 8.2 mΩ at V_GS=-10V and I_D=-50A.
- What are the common applications of this MOSFET?
Common applications include high-side MOSFETs for motor bridges, reverse battery protection, and use in electric two-wheelers and 48V MHEV applications.
- Does the IPD50P04P4L11ATMA2 require a charge pump for high side drive?
No, it does not require a charge pump for high side drive due to its logic level enhancement mode.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation is 58 W at T_C=25°C).
- What is the thermal resistance, junction to case (R_thJC), of this MOSFET?
The thermal resistance, junction to case (R_thJC), is 2.6 K/W).
- Is the IPD50P04P4L11ATMA2 AEC qualified?
Yes, it is AEC qualified, meeting automotive standards for reliability and performance).
- What are the available package types for this MOSFET?
The available package types include TO-252, TO-263, TO-220, and TO-262).
