BSS84PW L6327
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Infineon Technologies BSS84PW L6327

Manufacturer No:
BSS84PW L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 150MA SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS84PW L6327 is a highly versatile and reliable P-channel enhancement mode field-effect transistor (FET) produced by Infineon Technologies. This component is part of the SIPMOS family and is known for its robust performance and wide range of applications. It is particularly suited for use in various electronic systems due to its avalanche-rated and logic-level characteristics.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS -60 V
Continuous Drain Current ID -0.15 A
Pulsed Drain Current ID puls -0.6 A
Drain-Source On-State Resistance RDS(on) 8 Ω
Gate-Source Voltage VGS ±20 V
Power Dissipation Ptot 0.3 W
Operating and Storage Temperature Tj, Tstg -55 to +150 °C
Gate Threshold Voltage VGS(th) -1 to -2 V
Drain-Source Breakdown Voltage V(BR)DSS -60 V

Key Features

  • P-Channel Enhancement Mode: The BSS84PW operates in enhancement mode, making it suitable for a variety of switching applications.
  • Avalanche Rated: This FET is designed to withstand avalanche conditions, enhancing its reliability in demanding environments.
  • Logic Level: It can be driven directly by logic circuits, simplifying the design process.
  • dv/dt Rated: The component is rated for high dv/dt, ensuring stability in high-frequency applications.
  • Halogen-Free and AEC Q101 Qualified: Compliant with automotive and environmental standards, making it suitable for automotive and industrial applications.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its AEC Q101 qualification and robust performance.
  • Industrial Control: Used in industrial control systems where high reliability and durability are required.
  • Power Management: Ideal for power management circuits, including DC-DC converters and power switches.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring efficient and reliable switching.

Q & A

  1. What is the maximum drain-source voltage of the BSS84PW L6327?

    The maximum drain-source voltage (VDS) is -60 V.

  2. What is the continuous drain current rating of this FET?

    The continuous drain current (ID) is -0.15 A.

  3. Is the BSS84PW L6327 avalanche rated?

    Yes, the BSS84PW L6327 is avalanche rated, which enhances its reliability in demanding environments.

  4. What is the gate-source voltage range for this component?

    The gate-source voltage (VGS) range is ±20 V.

  5. Is the BSS84PW L6327 qualified according to AEC Q101?

    Yes, it is qualified according to AEC Q101, making it suitable for automotive applications.

  6. What is the operating temperature range for this FET?

    The operating and storage temperature range is -55 to +150 °C.

  7. What is the typical drain-source on-state resistance of the BSS84PW L6327?

    The typical drain-source on-state resistance (RDS(on)) is 8 Ω.

  8. Is the BSS84PW L6327 halogen-free?

    Yes, it is halogen-free according to IEC61249-2-21.

  9. What are some common applications of the BSS84PW L6327?

    Common applications include automotive systems, industrial control, power management, and consumer electronics.

  10. What is the power dissipation rating of this component?

    The power dissipation (Ptot) is 0.3 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19.1 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Same Series
BSS84PW
BSS84PW
MOSFET P-CH 60V 150MA SOT323-3

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