MMBT2907ALT1HTSA1
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Infineon Technologies MMBT2907ALT1HTSA1

Manufacturer No:
MMBT2907ALT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2907ALT1HTSA1 is a PNP silicon epitaxial planar transistor produced by Infineon Technologies. This transistor is designed for general-purpose amplifier and switching applications. It is housed in the SOT-23 package, which is ideal for low power surface mount applications. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of electronic systems. The MMBT2907ALT1HTSA1 is also AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -600 mAdc
Collector Current - Peak ICM -1200 mAdc
Total Device Dissipation (FR-5 Board) PD 225 mW
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C

Key Features

  • PNP silicon epitaxial planar transistor in SOT-23 package.
  • Low collector-emitter saturation voltage, ideal for low-voltage operation.
  • Complementary NPN type available (MMBT2222A).
  • Pb-free, halogen-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Low leakage current and high gain.
  • Suitable for medium power amplification and switching applications.

Applications

  • General-purpose amplifier applications.
  • Switching applications in portable equipment.
  • Driver stages of AF amplifiers.
  • Automotive and industrial control systems.
  • Low power surface mount circuits.

Q & A

  1. What is the collector-emitter voltage rating of the MMBT2907ALT1HTSA1?

    The collector-emitter voltage rating is -60 Vdc.

  2. What is the maximum continuous collector current for this transistor?

    The maximum continuous collector current is -600 mA.

  3. Is the MMBT2907ALT1HTSA1 RoHS compliant?
  4. What is the thermal resistance, junction-to-ambient, for this transistor on an FR-5 board?

    The thermal resistance, junction-to-ambient, is 556 °C/W.

  5. What are the junction and storage temperature ranges for this transistor?

    The junction and storage temperature ranges are -55 to +150 °C.

  6. Is the MMBT2907ALT1HTSA1 suitable for automotive applications?
  7. What is the complementary NPN type for the MMBT2907ALT1HTSA1?

    The complementary NPN type is MMBT2222A.

  8. What is the maximum peak collector current for this transistor?

    The maximum peak collector current is -1200 mA.

  9. What is the total device dissipation on an FR-5 board at 25°C?

    The total device dissipation is 225 mW.

  10. What are some typical applications of the MMBT2907ALT1HTSA1?

    Typical applications include general-purpose amplifier and switching applications, driver stages of AF amplifiers, and low power surface mount circuits.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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In Stock

$0.39
2,077

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