IRFP4468PBF
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Infineon Technologies IRFP4468PBF

Manufacturer No:
IRFP4468PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 100V 195A TO247AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, optimized for low RDS(on) and high current capability. It is designed using Trench MOSFET technology, offering extremely low on-resistance per silicon area and fast switching performance. The IRFP4468PBF is ideal for low frequency applications requiring performance and ruggedness, making it suitable for various high-power and high-temperature systems.

Key Specifications

Attribute Value
Transistor Polarity N Channel
Drain Source Voltage (Vds) 100V
Continuous Drain Current (Id) 290A
Drain Source On State Resistance (RDS(on)) 0.0026Ω @ 10V, 180A
Gate Source Threshold Voltage (Vgs(th)) 4V
Power Dissipation (Pd) 520W
Operating Temperature Range -55°C to +175°C
Transistor Case Style TO-247AC
Mounting Method Through Hole
Gate Charge (Qg) 540nC
Turn-on Delay Time 52ns
Turn-off Delay Time 160ns
Rise Time 230ns
Fall Time 260ns

Key Features

  • Optimized for low RDS(on) and high current capability, making it ideal for high efficiency synchronous rectification and high-power applications.
  • Industry standard through-hole power package (TO-247AC) allowing for drop-in replacement.
  • High-current rating of 290A and low on-resistance of 0.0026Ω.
  • Improved gate, avalanche, and dynamic dv/dt ruggedness.
  • Fully characterized capacitance and avalanche SOA (Safe Operating Area).
  • Enhanced body diode dV/dt and dI/dt capability.
  • Wide availability from distribution partners and industry standard qualification level according to JEDEC standards.

Applications

  • DC motors and motor control systems.
  • Battery management systems.
  • Inverters and DC-DC converters.
  • Uninterruptible power supplies (UPS).
  • High-speed power switching and hard-switched circuits.
  • High-power and high-temperature systems.

Q & A

  1. What is the drain-source voltage rating of the IRFP4468PBF?

    The drain-source voltage rating is 100V.

  2. What is the continuous drain current rating of the IRFP4468PBF?

    The continuous drain current rating is 290A.

  3. What is the on-state resistance (RDS(on)) of the IRFP4468PBF?

    The on-state resistance is 0.0026Ω at 10V and 180A.

  4. What is the operating temperature range of the IRFP4468PBF?

    The operating temperature range is -55°C to +175°C.

  5. What package type does the IRFP4468PBF use?

    The IRFP4468PBF uses a TO-247AC through-hole package.

  6. Is the IRFP4468PBF RoHS compliant?

    Yes, the IRFP4468PBF is RoHS compliant.

  7. What are some typical applications for the IRFP4468PBF?

    Typical applications include DC motors, battery management systems, inverters, DC-DC converters, and high-speed power switching.

  8. What technology is used in the IRFP4468PBF?

    The IRFP4468PBF uses Trench MOSFET technology.

  9. What is the gate charge (Qg) of the IRFP4468PBF?

    The gate charge is 540nC.

  10. What are the turn-on and turn-off delay times of the IRFP4468PBF?

    The turn-on delay time is 52ns, and the turn-off delay time is 160ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:540 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19860 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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Similar Products

Part Number IRFP4468PBF IRFP4868PBF IRFP4768PBF IRFP4568PBF IRFP4668PBF IRFP448PBF IRFP4368PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 300 V 250 V 150 V 200 V 500 V 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 70A (Tc) 93A (Tc) 171A (Tc) 130A (Tc) 11A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 180A, 10V 32mOhm @ 42A, 10V 17.5mOhm @ 56A, 10V 5.9mOhm @ 103A, 10V 9.7mOhm @ 81A, 10V 600mOhm @ 6.6A, 10V 1.85mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V 270 nC @ 10 V 270 nC @ 10 V 227 nC @ 10 V 241 nC @ 10 V 84 nC @ 10 V 570 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19860 pF @ 50 V 10774 pF @ 50 V 10880 pF @ 50 V 10470 pF @ 50 V 10720 pF @ 50 V 1900 pF @ 25 V 19230 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 520W (Tc) 517W (Tc) 520W (Tc) 517W (Tc) 520W (Tc) 180W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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