IRFP4568PBF
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Infineon Technologies IRFP4568PBF

Manufacturer No:
IRFP4568PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 150V 171A TO247AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFP4568PBF is a 150V single N-channel StrongIRFET™ power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is housed in a TO-247 package and is ideal for low frequency applications that require performance and ruggedness. The IRFP4568PBF is suitable for a broad range of applications, including DC motors, battery management systems, inverters, and DC-DC converters.

Key Specifications

Parameter Value
Drain to Source Voltage (VDS) 150V
Gate to Source Voltage (VGS) ±30V
Continuous Drain Current (ID) 171A
Pulsed Drain Current (IDM) 684A
On-Resistance (RDS(on)) 5.9mΩ @ 10V, 103A
Input Capacitance (Ciss) 10470pF @ 50V
Gate Charge (Qg) 227nC @ 10V
Maximum Junction Temperature (Tj) -55°C to 175°C
Maximum Power Dissipation 517W
Package TO-247-3

Key Features

  • Optimized for low RDS(on) and high current capability.
  • Industry standard through-hole power package (TO-247).
  • High-current rating and high power dissipation capability.
  • Improved gate, avalanche, and dynamic dV/dt ruggedness.
  • Fully characterized capacitance and avalanche SOA (Safe Operating Area).
  • Enhanced body diode dV/dt and dI/dt capability.
  • Lead-free and RoHS compliant.

Applications

  • High efficiency synchronous rectification in SMPS (Switch-Mode Power Supplies).
  • Uninterruptible Power Supply (UPS) systems.
  • High speed power switching applications.
  • Hard switched and high frequency circuits.
  • DC motors, battery management systems, inverters, and DC-DC converters.

Q & A

  1. What is the drain to source voltage rating of the IRFP4568PBF?

    The drain to source voltage rating is 150V.

  2. What is the continuous drain current of the IRFP4568PBF?

    The continuous drain current is 171A).

  3. What is the maximum junction temperature for the IRFP4568PBF?

    The maximum junction temperature is -55°C to 175°C).

  4. What package type is the IRFP4568PBF available in?

    The IRFP4568PBF is available in a TO-247-3 package).

  5. What are some of the key features of the IRFP4568PBF?

    Key features include low RDS(on), high current capability, improved gate and avalanche ruggedness, and enhanced body diode dV/dt and dI/dt capability).

  6. What are some common applications for the IRFP4568PBF?

    Common applications include high efficiency synchronous rectification in SMPS, uninterruptible power supply systems, high speed power switching, and hard switched and high frequency circuits).

  7. Is the IRFP4568PBF lead-free and RoHS compliant?
  8. What is the maximum power dissipation of the IRFP4568PBF?

    The maximum power dissipation is 517W).

  9. What is the input capacitance of the IRFP4568PBF at 50V?

    The input capacitance is 10470pF at 50V).

  10. What is the gate charge of the IRFP4568PBF at 10V?

    The gate charge is 227nC at 10V).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:171A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 103A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:227 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10470 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):517W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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$9.31
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Similar Products

Part Number IRFP4568PBF IRFP4868PBF IRFP4768PBF IRFP4668PBF IRFP4368PBF IRFP4468PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 300 V 250 V 200 V 75 V 100 V
Current - Continuous Drain (Id) @ 25°C 171A (Tc) 70A (Tc) 93A (Tc) 130A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 103A, 10V 32mOhm @ 42A, 10V 17.5mOhm @ 56A, 10V 9.7mOhm @ 81A, 10V 1.85mOhm @ 195A, 10V 2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 227 nC @ 10 V 270 nC @ 10 V 270 nC @ 10 V 241 nC @ 10 V 570 nC @ 10 V 540 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10470 pF @ 50 V 10774 pF @ 50 V 10880 pF @ 50 V 10720 pF @ 50 V 19230 pF @ 50 V 19860 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 517W (Tc) 517W (Tc) 520W (Tc) 520W (Tc) 520W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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