Overview
The MMBTA56LT1HTSA1 is a PNP silicon bipolar transistor manufactured by Infineon Technologies. This device is part of the MMBTA56L series and is designed for general-purpose amplifier and switching applications. It is packaged in the SOT-23 case style, which is a surface-mount package, making it suitable for a wide range of electronic designs where space is a constraint.
This transistor is known for its high reliability and robust performance, making it a preferred choice in various industrial and automotive applications. It is also compliant with RoHS, Pb-free, and halogen-free standards, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -80 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -4.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) | VCE(sat) | -0.25 | Vdc |
Key Features
- Pb-free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
- High Collector-Emitter Voltage: Up to -80 Vdc, making it suitable for high-voltage applications.
- Low Collector-Emitter Saturation Voltage: Typically -0.25 Vdc, which reduces power losses in switching applications.
- High DC Current Gain: Minimum of 100, ensuring reliable amplification and switching performance.
- Compact SOT-23 Package: Ideal for surface-mount applications where space is limited.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific control change requirements.
Applications
- General-Purpose Amplification: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
- Switching Applications: Used in switching circuits where high reliability and low power losses are critical.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for use in automotive systems.
- Industrial Control Systems: Reliable performance in industrial environments for control and monitoring systems.
- Consumer Electronics: Used in a variety of consumer electronic devices requiring compact and reliable transistor performance.
Q & A
- What is the collector-emitter voltage rating of the MMBTA56LT1HTSA1 transistor?
The collector-emitter voltage rating is -80 Vdc.
- What is the package type of the MMBTA56LT1HTSA1 transistor?
The transistor is packaged in the SOT-23 case style.
- Is the MMBTA56LT1HTSA1 transistor RoHS compliant?
- What is the maximum continuous collector current of the MMBTA56LT1HTSA1 transistor?
The maximum continuous collector current is -500 mAdc.
- What is the typical DC current gain of the MMBTA56LT1HTSA1 transistor?
The typical DC current gain is 100.
- What are the junction and storage temperature ranges for the MMBTA56LT1HTSA1 transistor?
The junction and storage temperature ranges are -55 to +150°C.
- Is the MMBTA56LT1HTSA1 transistor suitable for automotive applications?
- What is the collector-emitter saturation voltage of the MMBTA56LT1HTSA1 transistor?
The collector-emitter saturation voltage is typically -0.25 Vdc.
- How does the thermal resistance of the MMBTA56LT1HTSA1 transistor affect its performance?
The thermal resistance (RθJA) affects the device's ability to dissipate heat. For an FR-5 board, it is 556°C/W.
- What are some common applications of the MMBTA56LT1HTSA1 transistor?
