IPB042N10N3GE8187ATMA1
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Infineon Technologies IPB042N10N3GE8187ATMA1

Manufacturer No:
IPB042N10N3GE8187ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

Infineon Technologies' IPB042N10N3GE8187ATMA1 is a high-performance N-channel OptiMOS™ power MOSFET designed for high-efficiency, high-power-density applications. This component is part of the 100 V OptiMOS™ family, which offers superior solutions for Switch-Mode Power Supplies (SMPS) and other high-power applications. It is known for its excellent switching performance, low on-resistance, and environmentally friendly design.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)100V
RDS(on) (Drain-Source On-Resistance)4.2mΩ
ID (Drain Current)137A
IGSS (Gate-Source Leakage Current)-1100 nA
VGS (Gate-Source Voltage)20V
Tj (Junction Temperature)175°C
Ciss (Input Capacitance)6320 - 8410pF
Coss (Output Capacitance)1210 - 1610pF
Crss (Reverse Transfer Capacitance)41pF
td(on) (Turn-on Delay Time)27ns
tr (Rise Time)59ns
td(off) (Turn-off Delay Time)48ns

Key Features

  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance (RDS(on))
  • High operating temperature up to 175°C
  • Pb-free lead plating; RoHS compliant and halogen-free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification
  • MSL1 rated for ease of handling

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems (e.g., domestic vehicles, power tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems)
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Q & A

  1. What is the maximum drain-source voltage (VDS) of the IPB042N10N3GE8187ATMA1?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-resistance (RDS(on)) of this MOSFET?
    The typical on-resistance (RDS(on)) is 4.2 mΩ.
  3. What is the maximum drain current (ID) this MOSFET can handle?
    The maximum drain current (ID) is 137 A.
  4. Is the IPB042N10N3GE8187ATMA1 RoHS compliant?
    Yes, it is RoHS compliant and halogen-free.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is up to 175°C.
  6. What are some common applications for this MOSFET?
    Common applications include synchronous rectification for AC-DC SMPS, motor control, isolated DC-DC converters, and uninterruptable power supplies (UPS).
  7. What package type is the IPB042N10N3GE8187ATMA1 available in?
    It is available in the PG-TO263-3 package.
  8. Does this MOSFET have any environmental benefits?
    Yes, it is environmentally friendly due to its Pb-free lead plating and halogen-free design.
  9. How does this MOSFET improve efficiency in power supplies?
    It improves efficiency through its excellent switching performance, low on-resistance, and low gate charge.
  10. Is the IPB042N10N3GE8187ATMA1 suitable for high-frequency switching applications?
    Yes, it is ideal for high-frequency switching and synchronous rectification.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8410 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$2.39
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