IRF4905PBF
  • Share:

Infineon Technologies IRF4905PBF

Manufacturer No:
IRF4905PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 55V 74A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF4905PBF is a -55V single P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It is part of the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET is packaged in the TO-220AB package, a widely accepted industry standard for commercial and industrial applications, particularly at power dissipation levels up to approximately 50 watts. The device is known for its high performance, ruggedness, and fast switching capabilities, making it suitable for a variety of applications including DC motors, inverters, SMPS, lighting, and battery-powered devices.

Key Specifications

Parameter Value Units Conditions
Drain to Source Voltage (Vds) -55 V
Gate to Source Voltage (Vgs) ±20 V
On Resistance (Rds(on)) 0.02 Ω Vgs = -10V
Continuous Drain Current (Id) -74 A Vgs = -10V, Tc = 25°C
Pulsed Drain Current (Idm) -260 A
Power Dissipation (Pd) 200 W Tc = 25°C
Junction Temperature Range -55 to 175 °C
Thermal Resistance (RθJA) 62 °C/W

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Extremely low on-resistance per silicon area
  • Dynamic dv/dt rating and fast switching capabilities
  • Fully avalanche rated
  • High-current rating and high performance in low frequency applications
  • Industry standard through-hole power package (TO-220AB)
  • RoHS compliant and lead-free
  • 175°C operating temperature
  • Ruggedized device design for increased reliability

Applications

  • Communications equipment: Broadband fixed-line access, Datacom module, Wired networking, Wireless infrastructure
  • Industrial: Aerospace & defense, Appliances, Building automation, Electronic point of sale (EPOS), Factory automation & control, Grid infrastructure, Industrial transport, Lighting, Medical, Motor drives, Power delivery, Pro audio, video & signage, Test & measurement
  • Personal electronics: Connected peripherals & printers, Data storage, Gaming, Home theater & entertainment, Mobile phones, PC & notebooks, Portable electronics, Tablets, TV, Wearables (non-medical)
  • DC motors, inverters, SMPS, lighting, and battery-powered applications

Q & A

  1. What is the IRF4905PBF?

    The IRF4905PBF is a -55V single P-channel HEXFET power MOSFET in the TO-220AB package, manufactured by Infineon Technologies

  2. What are the key specifications of the IRF4905PBF?

    Key specifications include a drain to source voltage of -55V, gate to source voltage of ±20V, on resistance of 0.02Ω at Vgs = -10V, and continuous drain current of -74A at Vgs = -10V and Tc = 25°C

  3. What are the main features of the IRF4905PBF?

    The main features include extremely low on-resistance, dynamic dv/dt rating, fast switching, fully avalanche rated, and a high-current rating

  4. What are the typical applications of the IRF4905PBF?

    Typical applications include communications equipment, industrial sectors, personal electronics, DC motors, inverters, SMPS, lighting, and battery-powered applications

  5. Is the IRF4905PBF RoHS compliant?
  6. What is the operating temperature range of the IRF4905PBF?

    The operating temperature range is from -55°C to 175°C

  7. What is the package type of the IRF4905PBF?

    The IRF4905PBF is packaged in the TO-220AB package

  8. Can the IRF4905PBF be operated at a temperature of 100°C?
  9. What are the dimensions of the IRF4905PBF package?

    The package dimensions are approximately 5 x 2.7 x 0.3 inches

  10. How many pins does the IRF4905PBF have?

    The IRF4905PBF has 3 pins

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.66
8

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF4905PBF IRF4905SPBF IRF4905LPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 74A (Tc) 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 38A, 10V 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 170W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAS40-06B5000
BAS40-06B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8