IRF4905PBF
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Infineon Technologies IRF4905PBF

Manufacturer No:
IRF4905PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 55V 74A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF4905PBF is a -55V single P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It is part of the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET is packaged in the TO-220AB package, a widely accepted industry standard for commercial and industrial applications, particularly at power dissipation levels up to approximately 50 watts. The device is known for its high performance, ruggedness, and fast switching capabilities, making it suitable for a variety of applications including DC motors, inverters, SMPS, lighting, and battery-powered devices.

Key Specifications

Parameter Value Units Conditions
Drain to Source Voltage (Vds) -55 V
Gate to Source Voltage (Vgs) ±20 V
On Resistance (Rds(on)) 0.02 Ω Vgs = -10V
Continuous Drain Current (Id) -74 A Vgs = -10V, Tc = 25°C
Pulsed Drain Current (Idm) -260 A
Power Dissipation (Pd) 200 W Tc = 25°C
Junction Temperature Range -55 to 175 °C
Thermal Resistance (RθJA) 62 °C/W

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Extremely low on-resistance per silicon area
  • Dynamic dv/dt rating and fast switching capabilities
  • Fully avalanche rated
  • High-current rating and high performance in low frequency applications
  • Industry standard through-hole power package (TO-220AB)
  • RoHS compliant and lead-free
  • 175°C operating temperature
  • Ruggedized device design for increased reliability

Applications

  • Communications equipment: Broadband fixed-line access, Datacom module, Wired networking, Wireless infrastructure
  • Industrial: Aerospace & defense, Appliances, Building automation, Electronic point of sale (EPOS), Factory automation & control, Grid infrastructure, Industrial transport, Lighting, Medical, Motor drives, Power delivery, Pro audio, video & signage, Test & measurement
  • Personal electronics: Connected peripherals & printers, Data storage, Gaming, Home theater & entertainment, Mobile phones, PC & notebooks, Portable electronics, Tablets, TV, Wearables (non-medical)
  • DC motors, inverters, SMPS, lighting, and battery-powered applications

Q & A

  1. What is the IRF4905PBF?

    The IRF4905PBF is a -55V single P-channel HEXFET power MOSFET in the TO-220AB package, manufactured by Infineon Technologies

  2. What are the key specifications of the IRF4905PBF?

    Key specifications include a drain to source voltage of -55V, gate to source voltage of ±20V, on resistance of 0.02Ω at Vgs = -10V, and continuous drain current of -74A at Vgs = -10V and Tc = 25°C

  3. What are the main features of the IRF4905PBF?

    The main features include extremely low on-resistance, dynamic dv/dt rating, fast switching, fully avalanche rated, and a high-current rating

  4. What are the typical applications of the IRF4905PBF?

    Typical applications include communications equipment, industrial sectors, personal electronics, DC motors, inverters, SMPS, lighting, and battery-powered applications

  5. Is the IRF4905PBF RoHS compliant?
  6. What is the operating temperature range of the IRF4905PBF?

    The operating temperature range is from -55°C to 175°C

  7. What is the package type of the IRF4905PBF?

    The IRF4905PBF is packaged in the TO-220AB package

  8. Can the IRF4905PBF be operated at a temperature of 100°C?
  9. What are the dimensions of the IRF4905PBF package?

    The package dimensions are approximately 5 x 2.7 x 0.3 inches

  10. How many pins does the IRF4905PBF have?

    The IRF4905PBF has 3 pins

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF4905PBF IRF4905SPBF IRF4905LPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 74A (Tc) 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 38A, 10V 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 170W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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