Overview
The FDC658APG is a P-Channel Logic Level MOSFET produced by onsemi using their advanced POWERTRENCH process. This device is optimized for battery power management applications and offers high performance with extremely low on-resistance. It is packaged in a TSOT23 (Pb-Free/Halide Free) case, making it suitable for a variety of power management tasks.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | -30 | - | -30 | V |
| VGS (Gate-Source Voltage) | - | ±25 | - | ±25 | V |
| ID (Drain Current) - Continuous | - | -4 | - | -4 | A |
| ID (Drain Current) - Pulsed | - | -20 | - | -20 | A |
| PD (Maximum Power Dissipation) | Note 1a | - | - | 1.6 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +150 | - | -55 to +150 | °C |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = -10 V, ID = -4 A | 44 | 50 | 60 | mΩ |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = -4.5 V, ID = -3.4 A | 67 | 75 | - | mΩ |
| Qg (Total Gate Charge) | VDS = -15 V, ID = -4 A, VGS = -5 V | 6 | - | 8.1 | nC |
Key Features
- High Performance Trench Technology for Extremely Low RDS(on)
- Low Gate Charge
- Pb-Free, Halide Free, and RoHS Compliant
- Optimized for Battery Power Management Applications
- Low On-Resistance: RDS(on) = 50 mΩ @ VGS = -10 V, ID = -4 A
Applications
- Battery Management
- Load Switch
- Battery Protection
- DC-DC Conversion
Q & A
- What is the maximum drain-source voltage of the FDC658APG MOSFET?
The maximum drain-source voltage is -30 V. - What is the typical on-resistance of the FDC658APG at VGS = -10 V and ID = -4 A?
The typical on-resistance is 50 mΩ. - What is the maximum continuous drain current of the FDC658APG?
The maximum continuous drain current is -4 A. - Is the FDC658APG Pb-Free and Halide Free?
Yes, the FDC658APG is Pb-Free, Halide Free, and RoHS Compliant. - What are the typical applications of the FDC658APG?
The typical applications include battery management, load switch, battery protection, and DC-DC conversion. - What is the thermal resistance, junction-to-ambient (RJA) of the FDC658APG?
The thermal resistance, junction-to-ambient (RJA) is 78 °C/W when mounted on a 1 in2 pad of 2 oz. copper. - What is the gate threshold voltage of the FDC658APG?
The gate threshold voltage (VGS(th)) is between -1 V and -3 V. - What is the total gate charge of the FDC658APG?
The total gate charge (Qg) is between 6 nC and 8.1 nC. - What is the operating and storage junction temperature range of the FDC658APG?
The operating and storage junction temperature range is -55°C to +150°C. - What package type is the FDC658APG available in?
The FDC658APG is available in a TSOT23 (Pb-Free/Halide Free) package.
