FDS8935
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onsemi FDS8935

Manufacturer No:
FDS8935
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 80V 2.1A 8SOIC
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The FDS8935 is a P-channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This component is designed to optimize on-state resistance (rDS(on)), switching performance, and ruggedness. Although it is currently listed as obsolete, it was widely used in various electronic applications due to its robust characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vds)-80V
Current Rating (Id)-2.1A
Power Dissipation (Pd)3.1W
On-state Resistance (rDS(on))247mΩ @ 4.5V, 1.9A; 308mΩ @ specified conditions
Gate-Source Voltage (Vgs)±20V
Package TypeSOP-8
Mounting TypeSMD
RoHS ComplianceYes

Key Features

  • Advanced PowerTrench® process for improved rDS(on) and switching performance
  • High voltage rating of -80V and current rating of -2.1A
  • Low on-state resistance for efficient operation
  • Rugged design for enhanced reliability
  • SOP-8 package suitable for surface mount applications

Applications

The FDS8935 P-channel MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management circuits
  • Switching circuits
  • Audio and video equipment
  • Automotive electronics
  • General-purpose switching and amplification

Q & A

  1. What is the voltage rating of the FDS8935 MOSFET?
    The voltage rating of the FDS8935 MOSFET is -80V.
  2. What is the current rating of the FDS8935 MOSFET?
    The current rating of the FDS8935 MOSFET is -2.1A.
  3. What is the on-state resistance of the FDS8935 MOSFET?
    The on-state resistance of the FDS8935 MOSFET is 247mΩ @ 4.5V, 1.9A and 308mΩ at specified conditions.
  4. What package type does the FDS8935 MOSFET come in?
    The FDS8935 MOSFET comes in an SOP-8 package.
  5. Is the FDS8935 MOSFET RoHS compliant?
    Yes, the FDS8935 MOSFET is RoHS compliant.
  6. What is the power dissipation of the FDS8935 MOSFET?
    The power dissipation of the FDS8935 MOSFET is 3.1W.
  7. What process is used to manufacture the FDS8935 MOSFET?
    The FDS8935 MOSFET is manufactured using the advanced PowerTrench® process.
  8. Why is the FDS8935 MOSFET considered rugged?
    The FDS8935 MOSFET is considered rugged due to its enhanced design for reliability and performance.
  9. What are some common applications of the FDS8935 MOSFET?
    The FDS8935 MOSFET is commonly used in power management circuits, switching circuits, audio and video equipment, automotive electronics, and general-purpose switching and amplification.
  10. Is the FDS8935 MOSFET still in production?
    No, the FDS8935 MOSFET is listed as obsolete and is no longer manufactured.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:2.1A
Rds On (Max) @ Id, Vgs:183mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:879pF @ 40V
Power - Max:1.6W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number FDS8935 FDS4935
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 80V 30V
Current - Continuous Drain (Id) @ 25°C 2.1A 7A
Rds On (Max) @ Id, Vgs 183mOhm @ 2.1A, 10V 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 879pF @ 40V 1233pF @ 15V
Power - Max 1.6W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

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