Overview
The NVMFD5C446NWFT1G is a dual N-channel power MOSFET produced by onsemi, designed for high-power applications. This device features a compact DFN8 package (5x6 mm) and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The MOSFET is characterized by its low on-resistance, minimal conduction losses, and enhanced thermal performance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 127 | A |
| Continuous Drain Current (TA = 25°C) | ID | 24 | A |
| Power Dissipation (TC = 25°C) | PD | 89 | W |
| Power Dissipation (TA = 25°C) | PD | 3.2 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 637 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 2.9 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 2.5 - 3.5 | V |
| Total Gate Charge (VGS = 10 V, VDS = 32 V, ID = 30 A) | QG(TOT) | 38 | nC |
Key Features
- Compact Design: Small footprint (5x6 mm) in DFN8 package for space-efficient designs.
- Low On-Resistance: Minimizes conduction losses with RDS(on) of 2.9 mΩ at VGS = 10 V and ID = 30 A.
- Low QG and Capacitance: Reduces driver losses with total gate charge (QG(TOT)) of 38 nC.
- Enhanced Optical Inspection: Wettable flank option (NVMFD5C446NWF) for improved inspection.
- AEC-Q101 Qualified: Meets automotive standards for reliability and performance.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Automotive Systems: Suitable for various automotive applications due to AEC-Q101 qualification.
- Power Management: Ideal for power management in high-power devices and systems.
- Industrial Control: Used in industrial control systems requiring high reliability and performance.
- Consumer Electronics: Applicable in consumer electronics where compact, high-performance MOSFETs are needed.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5C446NWFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 127 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 30 A?
The on-resistance (RDS(on)) is 2.9 mΩ at VGS = 10 V and ID = 30 A.
- Is the NVMFD5C446NWFT1G AEC-Q101 qualified?
Yes, the NVMFD5C446NWFT1G is AEC-Q101 qualified.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55°C to +175°C.
- What is the total gate charge at VGS = 10 V, VDS = 32 V, and ID = 30 A?
The total gate charge (QG(TOT)) is 38 nC.
- Is the device Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the package type of the NVMFD5C446NWFT1G?
The package type is DFN8 (5x6 mm) with wettable flanks for enhanced optical inspection.
- What are the typical applications of the NVMFD5C446NWFT1G?
Typical applications include automotive systems, power management, industrial control, and consumer electronics.
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 89 W.
