Overview
The FDC6303N is a dual N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. The FDC6303N is particularly suited for low voltage applications and serves as a replacement for bipolar digital transistors and small signal MOSFETs.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | - | 25 | V |
| Gate-Source Voltage (VGSS) | -0.5 | - | 8 | V |
| Continuous Drain Current (ID) | - | - | 0.5 | A |
| Pulsed Drain Current (ID) | - | - | 1.5 | A |
| Maximum Power Dissipation (PD) | - | - | 0.3 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | - | 150 | °C |
| Electrostatic Discharge Rating (ESD) | - | - | 6 kV | Human Body Model |
| Gate Threshold Voltage (VGS(th)) | 0.65 | 0.8 | 1.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5 V | - | 0.34 | 0.45 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.7 V | - | 0.44 | 0.6 | Ω |
Key Features
- High cell density DMOS technology to minimize on-state resistance.
- Logic level enhancement mode operation, suitable for low voltage applications.
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- Pb-Free and RoHS compliant.
Applications
The FDC6303N is designed for various low voltage applications, including:
- Replacement for bipolar digital transistors and small signal MOSFETs.
- Use in digital circuits requiring low on-state resistance.
- Applications in power management, such as switching and power amplification.
- Embedded in consumer electronics, automotive systems, and industrial control devices.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDC6303N?
The maximum drain-source voltage (VDSS) is 25 V.
- What is the gate-source threshold voltage (VGS(th)) range?
The gate-source threshold voltage (VGS(th)) range is from 0.65 V to 1.5 V.
- What is the continuous drain current (ID) rating?
The continuous drain current (ID) rating is 0.5 A.
- What is the maximum power dissipation (PD) of the FDC6303N?
The maximum power dissipation (PD) is 0.3 W.
- Is the FDC6303N Pb-Free and RoHS compliant?
- What is the operating and storage temperature range for the FDC6303N?
The operating and storage temperature range is from -55°C to 150°C.
- What is the ESD rating of the FDC6303N?
The ESD rating is >6 kV according to the Human Body Model.
- What package type is the FDC6303N available in?
The FDC6303N is available in the SC70-6 surface mount package.
- What are the typical applications of the FDC6303N?
The FDC6303N is typically used in low voltage applications, including digital circuits, power management, consumer electronics, automotive systems, and industrial control devices.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 4.5 V?
The static drain-source on-resistance (RDS(on)) at VGS = 4.5 V is typically 0.34 Ω to 0.45 Ω.
