Overview
The FDC6305N is a dual N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining low gate charge, ensuring superior switching performance. It is packaged in the SUPERSOT-6 package, which offers a small footprint and low profile, making it ideal for space-constrained applications. The FDC6305N is a Pb-free device, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 20 | V |
| Gate-Source Voltage (VGSS) | ±8 | V |
| Continuous Drain Current (ID) | 2.7 | A |
| Pulsed Drain Current (ID) | 8 | A |
| Power Dissipation (PD) | 0.96 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RJA) | 130 | °C/W |
| Thermal Resistance, Junction-to-Case (RJC) | 60 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 4.5 V | 0.08 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 2.5 V | 0.12 | Ω |
| Gate Threshold Voltage (VGS(th)) | 0.4 to 1.5 | V |
| Total Gate Charge (Qg) | 3.5 | nC |
Key Features
- N-Channel MOSFET with 2.7 A, 20 V rating
- Low on-state resistance (RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5 V)
- Fast switching speed
- Low gate charge (3.5 nC typical)
- High performance trench technology for extremely low RDS(on)
- SUPERSOT-6 package: small footprint (72% smaller than standard SO-8), low profile (1 mm thick)
- Pb-free device
Applications
- DC/DC converters
- Load switches
- Motor driving
Q & A
- What is the maximum drain-source voltage of the FDC6305N?
The maximum drain-source voltage (VDSS) is 20 V. - What is the continuous drain current rating of the FDC6305N?
The continuous drain current (ID) is 2.7 A. - What is the thermal resistance, junction-to-ambient (RJA), of the FDC6305N?
The thermal resistance, junction-to-ambient (RJA), is 130 °C/W. - What is the gate threshold voltage range of the FDC6305N?
The gate threshold voltage (VGS(th)) range is from 0.4 V to 1.5 V. - What is the typical total gate charge of the FDC6305N?
The typical total gate charge (Qg) is 3.5 nC. - What package type is used for the FDC6305N?
The FDC6305N is packaged in the SUPERSOT-6 package. - Is the FDC6305N a Pb-free device?
Yes, the FDC6305N is a Pb-free device. - What are some common applications of the FDC6305N?
Common applications include DC/DC converters, load switches, and motor driving. - What is the maximum power dissipation of the FDC6305N?
The maximum power dissipation (PD) is 0.96 W. - What is the operating and storage junction temperature range of the FDC6305N?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.
