Overview
The 2N7002DWH6327XTSA1 is a dual N-channel small-signal MOSFET produced by Infineon Technologies. It is packaged in the SOT363 format, making it suitable for a variety of applications where space efficiency and high performance are crucial. This MOSFET is designed in enhancement mode and features logic level gate drive, making it compatible with a wide range of control signals. It is also avalanche rated and dv/dt rated, ensuring robust performance under various operating conditions.
Key Specifications
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Continuous Drain Current | I_D | T_A = 25 °C | A | - | - | 0.30 |
| Pulsed Drain Current | I_D,pulse | T_A = 25 °C | A | - | - | 1.2 |
| Avalanche Energy, Single Pulse | E_AS | I_D = 0.3 A, R_GS = 25 Ω | mJ | - | - | 1.3 |
| Gate Source Voltage | V_GS | - | V | -20 | - | 20 |
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS = 0 V, I_D = 250 µA | V | - | - | 60 |
| Gate Threshold Voltage | V_GS(th) | V_DS = V_GS, I_D = 250 µA | V | 1.5 | 2.1 | 2.5 |
| Drain-Source On-State Resistance | R_DS(on) | V_GS = 10 V, I_D = 0.5 A | Ω | - | 1.6 | 3 |
| Operating and Storage Temperature | T_j, T_stg | - | °C | -55 | - | 150 |
Key Features
- Enhancement Mode: The MOSFET operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
- Logic Level: Compatible with logic level gate drive, making it easy to integrate with digital control circuits.
- Avalanche Rated: Capable of withstanding high-energy pulses, enhancing reliability in demanding applications.
- Fast Switching: Optimized for fast switching times, suitable for high-frequency applications.
- Dv/Dt Rated: Rated for high dv/dt (voltage change over time), ensuring robust performance in dynamic environments.
- Pb-free and RoHS Compliant: Lead-free and RoHS compliant, adhering to environmental standards.
- Halogen-Free: Compliant with IEC 61249-2-21, ensuring minimal environmental impact.
- Qualified According to Automotive Standards: Meets AEC Q101 standards, suitable for automotive applications.
- PPAP Capable: Supports Production Part Approval Process (PPAP) for automotive quality assurance.
Applications
- LED Lighting: Ideal for LED lighting systems due to its low R_DS(on) and high efficiency.
- ADAS (Advanced Driver Assistance Systems): Suitable for use in automotive ADAS systems requiring reliable and fast-switching components.
- Body Control Units: Used in body control units for automotive applications, ensuring reliable operation.
- SMPS (Switch-Mode Power Supplies): Applicable in SMPS designs where high efficiency and fast switching are essential.
- Motor Control: Employed in motor control circuits for efficient and reliable operation.
Q & A
- What is the maximum continuous drain current of the 2N7002DWH6327XTSA1 MOSFET?
The maximum continuous drain current is 0.30 A at T_A = 25 °C.
- What is the typical gate threshold voltage of this MOSFET?
The typical gate threshold voltage is 2.1 V.
- Is the 2N7002DWH6327XTSA1 MOSFET RoHS compliant?
Yes, it is RoHS compliant and lead-free.
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature ranges are -55 °C to 150 °C.
- What is the maximum drain-source breakdown voltage?
The maximum drain-source breakdown voltage is 60 V.
- Is the 2N7002DWH6327XTSA1 qualified according to automotive standards?
Yes, it is qualified according to AEC Q101 standards.
- What are some potential applications of the 2N7002DWH6327XTSA1 MOSFET?
Potential applications include LED lighting, ADAS, body control units, SMPS, and motor control.
- What is the typical drain-source on-state resistance of this MOSFET?
The typical drain-source on-state resistance is 1.6 Ω at V_GS = 10 V and I_D = 0.5 A.
- Is the 2N7002DWH6327XTSA1 halogen-free?
Yes, it is halogen-free according to IEC 61249-2-21.
- What package type is used for the 2N7002DWH6327XTSA1 MOSFET?
The MOSFET is packaged in the SOT363 format.
