BSS84PWH6327XTSA1
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Infineon Technologies BSS84PWH6327XTSA1

Manufacturer No:
BSS84PWH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 150MA SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS84PWH6327XTSA1 is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Infineon Technologies. This small signal MOSFET is designed for power-switching applications and is packaged in a SOT-323-3 package. It is part of Infineon's broad portfolio of small signal MOSFETs, which are known for their high quality and reliability, making them suitable for various automotive and industrial applications.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS -60 V
Drain-Source On-State Resistance RDS(on) 8 Ω
Continuous Drain Current ID -0.15 A
Pulsed Drain Current ID puls -0.6 A
Gate-Source Voltage VGS ±20 V
Power Dissipation Ptot 0.3 W
Operating and Storage Temperature Tj, Tstg -55 to +150 °C
Thermal Resistance, Junction to Ambient RthJA 420 K/W
Gate Threshold Voltage VGS(th) -1 to -2 V

Key Features

  • Enhancement Mode: The BSS84PWH6327XTSA1 operates in enhancement mode, which means it is normally off and requires a positive gate-source voltage to turn on.
  • Logic Level: This MOSFET is logic level, making it compatible with standard logic voltage levels.
  • Avalanche Rated: It is rated for avalanche energy, making it robust against voltage spikes and transient conditions.
  • Fast Switching: The MOSFET has fast switching times, including turn-on and turn-off delays, which are crucial for high-frequency applications.
  • Dv/dt Rated: It is rated for high dv/dt (voltage change over time), ensuring stability in high-speed switching environments).
  • Pb-free and RoHS Compliant: The component is lead-free and compliant with RoHS standards, making it environmentally friendly).
  • Halogen-free: It is also halogen-free, further enhancing its environmental compliance).
  • Automotive Qualified: Qualified according to automotive standards (AEC Q101), ensuring high reliability and quality).

Applications

  • LED Lighting: Suitable for LED lighting systems due to its low RDS(on) and fast switching capabilities).
  • ADAS (Advanced Driver Assistance Systems): Used in automotive ADAS systems for reliable and efficient power switching).
  • Body Control Units: Ideal for body control units in vehicles due to its high reliability and small package size).
  • SMPS (Switch-Mode Power Supplies): Used in SMPS for efficient power management and high-frequency switching).
  • Motor Control: Suitable for motor control applications requiring fast and reliable power switching).

Q & A

  1. What is the drain-source voltage rating of the BSS84PWH6327XTSA1?

    The drain-source voltage rating is -60 V).

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is -0.15 A).

  3. Is the BSS84PWH6327XTSA1 RoHS compliant?

    Yes, it is RoHS compliant and halogen-free).

  4. What is the gate-source voltage range for this MOSFET?

    The gate-source voltage range is ±20 V).

  5. What are the typical applications of the BSS84PWH6327XTSA1?

    Typical applications include LED lighting, ADAS, body control units, SMPS, and motor control).

  6. What is the thermal resistance, junction to ambient, for this component?

    The thermal resistance, junction to ambient, is up to 420 K/W).

  7. Is the BSS84PWH6327XTSA1 qualified for automotive use?

    Yes, it is qualified according to automotive standards (AEC Q101)).

  8. What is the package type of the BSS84PWH6327XTSA1?

    The package type is SOT-323-3).

  9. What are the benefits of the low RDS(on) in this MOSFET?

    The low RDS(on) provides higher efficiency and extends battery life).

  10. Is the BSS84PWH6327XTSA1 Pb-free?

    Yes, it is Pb-free and has lead-plating).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19.1 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS84PWH6327XTSA1 BSS84PH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 10V 8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19.1 pF @ 25 V 19 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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