BSS84PH6327XTSA1
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Infineon Technologies BSS84PH6327XTSA1

Manufacturer No:
BSS84PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS84PH6327XTSA1 is a 60V, 170mA P-Channel MOSFET from Infineon Technologies AG. This device is designed for precision temperature control, high accuracy sensing, and low noise operation, making it suitable for a wide range of applications. The MOSFET is packaged in a compact SOT-23-3 package, which provides a robust and reliable connection. It is particularly useful in low voltage switching applications, battery-powered systems, and portable electronics.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (Vds) 60 V
Continuous Drain Current (Id) 170 mA
Gate-Source Voltage (Vgs) ±20 V
Gate-Source Threshold Voltage (Vgs th) 2 V
Drain-Source Resistance (Rds On) 5.8 Ohms
Power Dissipation (Pd) 360 mW
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
Turn-On Delay Time 6.7 ns
Turn-Off Delay Time 8.6 ns
Rise Time 16.2 ns
Fall Time 20.5 ns

Key Features

  • High current handling
  • Low leakage current
  • Fast thermal response
  • Ruggedized power electronics
  • Advanced driver technology
  • SMT package design
  • RoHS compliant solution
  • Industry standard interface
  • Precision temperature control
  • High accuracy sensing
  • Low noise operation

Applications

  • Low voltage switching applications
  • Battery-powered systems
  • Portable electronics
  • Small signal amplification
  • Level shifting
  • Power management
  • DC-DC converters
  • Relay drivers
  • Motor control circuits
  • Audio amplifiers

Q & A

  1. What is the drain-source breakdown voltage of the BSS84PH6327XTSA1?

    The drain-source breakdown voltage is 60V.

  2. What is the continuous drain current of the BSS84PH6327XTSA1?

    The continuous drain current is 170mA.

  3. What is the package type of the BSS84PH6327XTSA1?

    The package type is SOT-23-3.

  4. Is the BSS84PH6327XTSA1 RoHS compliant?
  5. What are the typical applications of the BSS84PH6327XTSA1?

    Typical applications include low voltage switching, battery-powered systems, portable electronics, and more.

  6. What is the maximum operating temperature of the BSS84PH6327XTSA1?

    The maximum operating temperature is 150°C.

  7. What is the minimum operating temperature of the BSS84PH6327XTSA1?

    The minimum operating temperature is -55°C.

  8. What is the gate-source threshold voltage of the BSS84PH6327XTSA1?

    The gate-source threshold voltage is 2V.

  9. Does the BSS84PH6327XTSA1 have fast thermal response?
  10. Is the BSS84PH6327XTSA1 suitable for automotive applications?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84PH6433XTMA1
BSS84PH6433XTMA1
MOSFET P-CH 60V 170MA SOT23-3
BSS84PH6327XTSA1
BSS84PH6327XTSA1
MOSFET P-CH 60V 170MA SOT23-3

Similar Products

Part Number BSS84PH6327XTSA1 BSS84PH6327XTSA2 BSS84PWH6327XTSA1 BSS83PH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 150mA (Ta) 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 170mA, 10V 8Ohm @ 170mA, 10V 8Ohm @ 150mA, 10V 2Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA 2V @ 20µA 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V 1.5 nC @ 10 V 3.57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19 pF @ 25 V 19 pF @ 25 V 19.1 pF @ 25 V 78 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 300mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT323 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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