BCX5616H6433XTMA1
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Infineon Technologies BCX5616H6433XTMA1

Manufacturer No:
BCX5616H6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT89
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BCX5616H6433XTMA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It is packaged in the SOT89-4 format, which is a small outline transistor package suitable for space-saving designs. The BCX5616H6433XTMA1 is known for its high current gain and low noise characteristics, making it a reliable choice for various electronic circuits.

Key Specifications

ParameterValue
Package TypeSOT89-4
PolarityNPN
Collector-Base Voltage (Vcb)60 V
Collector-Emitter Voltage (Vce)60 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)1 A
Base Current (Ib)50 mA
Current Gain (hfe)100-300
Operating Temperature Range-55°C to 150°C

Key Features

  • High current gain (hfe) of 100-300, ensuring reliable amplification.
  • Low noise characteristics, suitable for audio and signal processing applications.
  • Compact SOT89-4 package, ideal for space-saving designs.
  • High collector current of up to 1 A, supporting a wide range of applications.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.

Applications

The BCX5616H6433XTMA1 is suitable for a variety of applications, including:

  • General-purpose amplification in audio and signal processing circuits.
  • Switching applications in power supplies and motor control systems.
  • Automotive electronics due to its robust operating temperature range.
  • Consumer electronics such as audio equipment and home appliances.

Q & A

  1. What is the package type of the BCX5616H6433XTMA1?
    The BCX5616H6433XTMA1 is packaged in the SOT89-4 format.
  2. What is the maximum collector current of the BCX5616H6433XTMA1?
    The maximum collector current is 1 A.
  3. What is the operating temperature range of the BCX5616H6433XTMA1?
    The operating temperature range is from -55°C to 150°C.
  4. What are the typical applications of the BCX5616H6433XTMA1?
    It is used in general-purpose amplification, switching applications, automotive electronics, and consumer electronics.
  5. What is the polarity of the BCX5616H6433XTMA1 transistor?
    The polarity is NPN.
  6. What is the collector-base voltage (Vcb) of the BCX5616H6433XTMA1?
    The collector-base voltage (Vcb) is 60 V.
  7. What is the current gain (hfe) of the BCX5616H6433XTMA1?
    The current gain (hfe) is between 100-300.
  8. Is the BCX5616H6433XTMA1 suitable for high-temperature environments?
    Yes, it is suitable for environments with temperatures up to 150°C.
  9. Where can I find the datasheet for the BCX5616H6433XTMA1?
    You can find the datasheet on the official Infineon Technologies website or through distributors like Mouser, Digi-Key, and others.
  10. What is the emitter-base voltage (Veb) of the BCX5616H6433XTMA1?
    The emitter-base voltage (Veb) is 5 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX5616H6433XTMA1 BCX5316H6433XTMA1 BCX5516H6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89

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