BCX5516E6433HTMA1
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Infineon Technologies BCX5516E6433HTMA1

Manufacturer No:
BCX5516E6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516E6433HTMA1 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for a variety of applications requiring high performance and reliability. Although it is currently listed as obsolete, it remains a significant component in many existing designs and legacy systems. The transistor is housed in a surface-mount PG-SOT89 package, making it suitable for modern PCB designs.

Key Specifications

ParameterValue
TypeNPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (Vce)60 V
Maximum Collector Current (Ic)1 A
Maximum Power Dissipation (Pd)2 W
Transition Frequency (ft)100 MHz
Package TypePG-SOT89 (Surface Mount)

Key Features

  • High collector current of up to 1 A, making it suitable for power amplification and switching applications.
  • Maximum collector-emitter voltage of 60 V, providing robustness against voltage spikes.
  • Transition frequency of 100 MHz, enabling high-frequency operation.
  • Compact PG-SOT89 surface-mount package for efficient board space utilization.
  • High power dissipation capability of up to 2 W.

Applications

The BCX5516E6433HTMA1 is versatile and can be used in a variety of applications, including:

  • Power amplifiers and audio amplifiers due to its high current and frequency capabilities.
  • Switching circuits in industrial and automotive systems where reliability and high performance are critical.
  • General-purpose amplification and signal processing in electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BCX5516E6433HTMA1?
    The maximum collector-emitter voltage is 60 V.
  2. What is the maximum collector current of the BCX5516E6433HTMA1?
    The maximum collector current is 1 A.
  3. What is the transition frequency of the BCX5516E6433HTMA1?
    The transition frequency is 100 MHz.
  4. What type of package does the BCX5516E6433HTMA1 use?
    The BCX5516E6433HTMA1 is housed in a PG-SOT89 surface-mount package.
  5. Is the BCX5516E6433HTMA1 still in production?
    No, the BCX5516E6433HTMA1 is currently listed as obsolete.
  6. What are some common applications for the BCX5516E6433HTMA1?
    Common applications include power amplifiers, switching circuits, and general-purpose amplification in electronic devices.
  7. What is the maximum power dissipation of the BCX5516E6433HTMA1?
    The maximum power dissipation is 2 W.
  8. Why is the BCX5516E6433HTMA1 suitable for high-frequency applications?
    It is suitable due to its high transition frequency of 100 MHz.
  9. Where can I find more detailed specifications for the BCX5516E6433HTMA1?
    You can find detailed specifications in the datasheet available from distributors like Digi-Key or directly from Infineon Technologies.
  10. What are the advantages of using the BCX5516E6433HTMA1 in power amplification?
    The advantages include high collector current, high voltage handling, and high power dissipation capability.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX5516E6433HTMA1 BCX5616E6433HTMA1 BCX5216E6433HTMA1 BCX5316E6433HTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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