BCX5516H6327XTSA1
  • Share:

Infineon Technologies BCX5516H6327XTSA1

Manufacturer No:
BCX5516H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516H6327XTSA1 is a high-performance NPN bipolar junction transistor (BJT) developed by Infineon Technologies, formerly part of International Rectifier. This transistor is designed for high-current and high-frequency applications, making it suitable for a variety of demanding electronic circuits. It is packaged in a compact SOT89 case, ensuring ease of integration and reliability in various operational environments.

Key Specifications

ParameterValue
Manufacturer Part NumberBCX5516H6327XTSA1
ManufacturerInfineon Technologies
Package / CaseSOT89
Collector Current (Ic)1 A
Collector-Emitter Voltage (Vceo)60 V
PolarityNPN
MaterialSilicon
Number of Elements1
RoHS CompliantYes

Key Features

  • High current capacity: Capable of handling up to 1 A collector current.
  • High-frequency applications: Optimized for use in high-frequency circuits.
  • Integrated protection features: Enhances reliability and performance.
  • Low power consumption: Energy-efficient design reduces operational costs.
  • Enhanced thermal management: Ensures reliable performance across various temperature ranges.
  • Compact size: SOT89 package for ease of integration.
  • Standardized packaging: Facilitates seamless integration with existing technology platforms.
  • High efficiency and stability: Ensures consistent performance in demanding applications.
  • Long-term reliability: Rigorously tested to meet industry standards of quality.

Applications

The BCX5516H6327XTSA1 is suitable for a wide range of specialized applications, including:

  • Automotive systems: For high-reliability and high-performance requirements.
  • Industrial electronics: For applications requiring robust and efficient transistor operation.
  • Telecommunications: For high-frequency and high-current applications in RF and microwave circuits.

Q & A

  1. What is the collector current rating of the BCX5516H6327XTSA1?
    The collector current rating is 1 A.
  2. What is the collector-emitter voltage (Vceo) of this transistor?
    The collector-emitter voltage (Vceo) is 60 V.
  3. What package type is used for the BCX5516H6327XTSA1?
    The transistor is packaged in a SOT89 case.
  4. Is the BCX5516H6327XTSA1 RoHS compliant?
    Yes, it is RoHS compliant.
  5. What are the primary applications of the BCX5516H6327XTSA1?
    The primary applications include automotive, industrial electronics, and telecommunications.
  6. What are the key features of the BCX5516H6327XTSA1?
    Key features include high current capacity, high-frequency optimization, integrated protection features, low power consumption, and enhanced thermal management.
  7. What is the material used for the BCX5516H6327XTSA1 transistor?
    The transistor is made of silicon.
  8. Is the BCX5516H6327XTSA1 suitable for high-frequency applications?
    Yes, it is optimized for high-frequency applications.
  9. What is the polarity of the BCX5516H6327XTSA1 transistor?
    The polarity is NPN.
  10. How many elements are in the BCX5516H6327XTSA1 transistor?
    It is a single-element transistor.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

$0.20
337

Please send RFQ , we will respond immediately.

Same Series
BCX5416H6327XTSA1
BCX5416H6327XTSA1
TRANS NPN 45V 1A SOT89
BCX5516H6327XTSA1
BCX5516H6327XTSA1
TRANS NPN 60V 1A SOT89
BCX5616H6433XTMA1
BCX5616H6433XTMA1
TRANS NPN 80V 1A SOT89
BCX5610H6327XTSA1
BCX5610H6327XTSA1
TRANS NPN 80V 1A SOT89
BCX5410E6327
BCX5410E6327
TRANS NPN 45V 1A SOT89
BCX5516E6433HTMA1
BCX5516E6433HTMA1
TRANS NPN 60V 1A SOT89
BCX55E6327HTSA1
BCX55E6327HTSA1
TRANS NPN 60V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
TRANS NPN 80V 1A SOT89
BCX 55-16 E6327
BCX 55-16 E6327
TRANS NPN 60V 1A SOT-89
BCX56E6327HTSA1
BCX56E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX5616E6327HTSA1
BCX5616E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX56H6359XTMA1
BCX56H6359XTMA1
TRANS NPN 80V 1A SOT89

Similar Products

Part Number BCX5516H6327XTSA1 BCX5616H6327XTSA1 BCX5116H6327XTSA1 BCX5216H6327XTSA1 BCX5316H6327XTSA1 BCX5416H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz 125MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

Related Product By Categories

BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV 199 B6327
BAV 199 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS16B5000
BAS16B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6327
BC857SH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC850CE6327HTSA1
BC850CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-23
BCP5310E6327HTSA1
BCP5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
BSP742RINT
BSP742RINT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36