BCX5516H6327XTSA1
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Infineon Technologies BCX5516H6327XTSA1

Manufacturer No:
BCX5516H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516H6327XTSA1 is a high-performance NPN bipolar junction transistor (BJT) developed by Infineon Technologies, formerly part of International Rectifier. This transistor is designed for high-current and high-frequency applications, making it suitable for a variety of demanding electronic circuits. It is packaged in a compact SOT89 case, ensuring ease of integration and reliability in various operational environments.

Key Specifications

ParameterValue
Manufacturer Part NumberBCX5516H6327XTSA1
ManufacturerInfineon Technologies
Package / CaseSOT89
Collector Current (Ic)1 A
Collector-Emitter Voltage (Vceo)60 V
PolarityNPN
MaterialSilicon
Number of Elements1
RoHS CompliantYes

Key Features

  • High current capacity: Capable of handling up to 1 A collector current.
  • High-frequency applications: Optimized for use in high-frequency circuits.
  • Integrated protection features: Enhances reliability and performance.
  • Low power consumption: Energy-efficient design reduces operational costs.
  • Enhanced thermal management: Ensures reliable performance across various temperature ranges.
  • Compact size: SOT89 package for ease of integration.
  • Standardized packaging: Facilitates seamless integration with existing technology platforms.
  • High efficiency and stability: Ensures consistent performance in demanding applications.
  • Long-term reliability: Rigorously tested to meet industry standards of quality.

Applications

The BCX5516H6327XTSA1 is suitable for a wide range of specialized applications, including:

  • Automotive systems: For high-reliability and high-performance requirements.
  • Industrial electronics: For applications requiring robust and efficient transistor operation.
  • Telecommunications: For high-frequency and high-current applications in RF and microwave circuits.

Q & A

  1. What is the collector current rating of the BCX5516H6327XTSA1?
    The collector current rating is 1 A.
  2. What is the collector-emitter voltage (Vceo) of this transistor?
    The collector-emitter voltage (Vceo) is 60 V.
  3. What package type is used for the BCX5516H6327XTSA1?
    The transistor is packaged in a SOT89 case.
  4. Is the BCX5516H6327XTSA1 RoHS compliant?
    Yes, it is RoHS compliant.
  5. What are the primary applications of the BCX5516H6327XTSA1?
    The primary applications include automotive, industrial electronics, and telecommunications.
  6. What are the key features of the BCX5516H6327XTSA1?
    Key features include high current capacity, high-frequency optimization, integrated protection features, low power consumption, and enhanced thermal management.
  7. What is the material used for the BCX5516H6327XTSA1 transistor?
    The transistor is made of silicon.
  8. Is the BCX5516H6327XTSA1 suitable for high-frequency applications?
    Yes, it is optimized for high-frequency applications.
  9. What is the polarity of the BCX5516H6327XTSA1 transistor?
    The polarity is NPN.
  10. How many elements are in the BCX5516H6327XTSA1 transistor?
    It is a single-element transistor.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX5516H6327XTSA1 BCX5616H6327XTSA1 BCX5116H6327XTSA1 BCX5216H6327XTSA1 BCX5316H6327XTSA1 BCX5416H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz 125MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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