BCX5216H6327XTSA1
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Infineon Technologies BCX5216H6327XTSA1

Manufacturer No:
BCX5216H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5216H6327XTSA1 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BCX52 series and is designed for automotive applications, complying with the AEC-Q101 standard. It features a robust design in the SOT-89 (SC-62) package, making it suitable for a variety of surface mount applications. The transistor is known for its reliability and performance in high-voltage and high-current environments.

Key Specifications

Polarity PNP
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 2 W
Package Style SOT-89 (SC-62)
Mounting Method Surface Mount
Operating Temperature (TJ) 150°C
Transition Frequency 125 MHz
VCE Saturation (Max) @ IB, IC 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ IC, VCE 100 @ 150 mA, 2 V

Key Features

  • AEC-Q101 Qualified: Suitable for automotive applications, ensuring high reliability and performance under stringent conditions.
  • High Collector Current and Voltage: Capable of handling up to 1 A of collector current and 60 V of collector-emitter voltage.
  • High Power Dissipation: Can dissipate up to 2 W of power, making it suitable for demanding applications.
  • Surface Mount Package: SOT-89 (SC-62) package allows for efficient surface mount assembly.
  • RoHS Compliant: Lead-free and halogen-free, adhering to environmental regulations.
  • High Transition Frequency: Supports frequencies up to 125 MHz, suitable for high-frequency applications.

Applications

  • Automotive Systems: Ideal for use in automotive electronics due to its AEC-Q101 qualification and robust performance.
  • Power Amplifiers: Suitable for power amplifier circuits requiring high current and voltage handling.
  • Switching Circuits: Can be used in switching applications where high transition frequencies are necessary.
  • General Purpose Amplification: Applicable in various general-purpose amplification and switching roles.

Q & A

  1. What is the polarity of the BCX5216H6327XTSA1 transistor?

    The BCX5216H6327XTSA1 is a PNP bipolar junction transistor.

  2. What is the maximum collector-emitter voltage (VCEO) of the BCX5216H6327XTSA1?

    The maximum collector-emitter voltage is 60 V.

  3. What is the maximum collector current (IC) of the BCX5216H6327XTSA1?

    The maximum collector current is 1 A.

  4. What is the power dissipation capability of the BCX5216H6327XTSA1?

    The transistor can dissipate up to 2 W of power.

  5. What package style does the BCX5216H6327XTSA1 come in?

    The transistor is packaged in the SOT-89 (SC-62) format.

  6. Is the BCX5216H6327XTSA1 RoHS compliant?
  7. What is the operating temperature range of the BCX5216H6327XTSA1?

    The operating temperature range is up to 150°C (TJ).

  8. What is the transition frequency of the BCX5216H6327XTSA1?

    The transition frequency is 125 MHz.

  9. Is the BCX5216H6327XTSA1 suitable for automotive applications?
  10. How is the BCX5216H6327XTSA1 typically packaged for shipping?

    The transistor is typically packaged in reels with 1000 units per reel.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX5216H6327XTSA1 BCX5316H6327XTSA1 BCX5416H6327XTSA1 BCX5516H6327XTSA1 BCX5116H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 125MHz 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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