BCX5310E6327HTSA1
  • Share:

Infineon Technologies BCX5310E6327HTSA1

Manufacturer No:
BCX5310E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5310E6327HTSA1 is a general-purpose PNP bipolar transistor manufactured by Infineon Technologies. This transistor is part of the BCX53 series, known for its reliability and versatility in various electronic applications. Although the specific part number BCX5310E6327HTSA1 is currently discontinued, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Breakdown Voltage V(BR)CBO 80 V
Collector-Emitter Breakdown Voltage V(BR)CEO 80 V
Emitter-Base Breakdown Voltage V(BR)EBO 5 V
Collector Current IC 1 A
Peak Collector Current (tp ≤ 10 ms) ICM 1.5 A
Base Current IB 100 mA
Peak Base Current (tp ≤ 10 ms) IBM 200 mA
Total Power Dissipation Ptot 2 W
Junction Temperature Tj 150 °C
Transition Frequency fT 125 MHz
DC Current Gain (hFE) @ IC = 150 mA, VCE = 2 V hFE 100
Collector-Emitter Saturation Voltage @ IB = 50 mA, IC = 500 mA VCEsat 0.5 V
Package Type SOT-89

Key Features

  • High Collector-Emitter Breakdown Voltage: Up to 80 V, making it suitable for applications requiring high voltage handling.
  • High Current Capability: Maximum collector current of 1 A and peak collector current of 1.5 A for short durations.
  • Low Saturation Voltage: Collector-emitter saturation voltage of 0.5 V, which reduces power losses in switching applications.
  • High Transition Frequency: 125 MHz, suitable for high-frequency applications.
  • Compact Package: SOT-89 package, ideal for space-constrained designs.
  • Lead-Free and Halogen-Free: Compliant with environmental regulations.

Applications

  • General Purpose Amplification: Suitable for various amplification tasks in electronic circuits.
  • Switching Circuits: Used in switching applications due to its low saturation voltage and high current handling.
  • Audio Amplifiers: Can be used in audio amplifiers requiring high fidelity and low distortion.
  • Automotive Electronics: Applicable in automotive systems due to its robustness and high temperature tolerance.
  • Industrial Control Systems: Used in industrial control circuits for reliable operation under various conditions.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCX5310E6327HTSA1 transistor?

    The maximum collector-emitter breakdown voltage is 80 V.

  2. What is the maximum collector current of the BCX5310E6327HTSA1 transistor?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCX5310E6327HTSA1 transistor?

    The transition frequency is 125 MHz.

  4. What is the package type of the BCX5310E6327HTSA1 transistor?

    The package type is SOT-89.

  5. Is the BCX5310E6327HTSA1 transistor lead-free and halogen-free?

    Yes, it is lead-free and halogen-free.

  6. What is the maximum junction temperature of the BCX5310E6327HTSA1 transistor?

    The maximum junction temperature is 150°C.

  7. What is the DC current gain (hFE) of the BCX5310E6327HTSA1 transistor at IC = 150 mA and VCE = 2 V?

    The DC current gain (hFE) is 100.

  8. What is the collector-emitter saturation voltage of the BCX5310E6327HTSA1 transistor at IB = 50 mA and IC = 500 mA?

    The collector-emitter saturation voltage is 0.5 V.

  9. Is the BCX5310E6327HTSA1 transistor still in production?

    No, the BCX5310E6327HTSA1 transistor is discontinued.

  10. What are some common applications of the BCX5310E6327HTSA1 transistor?

    It is used in general-purpose amplification, switching circuits, audio amplifiers, automotive electronics, and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

$0.09
2,772

Please send RFQ , we will respond immediately.

Same Series
BCX5116H6433XTMA1
BCX5116H6433XTMA1
TRANS PNP 45V 1A SOT89
BCX5216H6433XTMA1
BCX5216H6433XTMA1
TRANS PNP 60V 1A SOT89
BCX52H6327XTSA1
BCX52H6327XTSA1
TRANS PNP 60V 1A SOT89
BCX5310H6327XTSA1
BCX5310H6327XTSA1
TRANS PNP 80V 1A SOT89
BCX5316H6433XTMA1
BCX5316H6433XTMA1
TRANS PNP 80V 1A SOT89
BCX5116H6327XTSA1
BCX5116H6327XTSA1
TRANS PNP 45V 1A SOT89
BCX5310E6327HTSA1
BCX5310E6327HTSA1
TRANS PNP 80V 1A SOT89
BCX51E6327HTSA1
BCX51E6327HTSA1
TRANS PNP 45V 1A SOT89
BCX5316E6433HTMA1
BCX5316E6433HTMA1
TRANS PNP 80V 1A SOT89
BCX5216E6433HTMA1
BCX5216E6433HTMA1
TRANS PNP 60V 1A SOT89
BCX 51-16 E6327
BCX 51-16 E6327
TRANS PNP 45V 1A SOT-89
BCX5316E6327HTSA1
BCX5316E6327HTSA1
TRANS PNP 80V 1A SOT89

Similar Products

Part Number BCX5310E6327HTSA1 BCX5316E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BFS20
BFS20
Diotec Semiconductor
TRANS NPN 20V 0.025A SOT23-3
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8