BCX52H6327XTSA1
  • Share:

Infineon Technologies BCX52H6327XTSA1

Manufacturer No:
BCX52H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX52H6327XTSA1 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is packaged in the SOT-89 format and is designed for general-purpose applications. It is part of Infineon's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
PackageSOT-89
PolarizationPNP
Collector Current (I(C))1 A
Collector-Emitter Voltage (V(CEO))60 V
Current Gain160
Total Power Dissipation (P(tot))1 W
Collector-Base Voltage (V(CBO))60 V
RoHS StatusRoHS-conform

Key Features

  • High current gain of 160, making it suitable for amplification and switching applications.
  • Collector-Emitter Voltage of 60 V and Collector-Base Voltage of 60 V, providing robust performance in various circuits.
  • Total power dissipation of 1 W, ensuring reliable operation under moderate power conditions.
  • Pb-free (RoHS compliant) package, adhering to environmental standards.
  • SOT-89 package, which is compact and suitable for surface mount technology (SMT) assembly.

Applications

  • General-purpose amplification and switching circuits.
  • Audio frequency (AF) input stages and driver applications.
  • Automotive and industrial control systems where reliability and high current gain are essential.
  • Other electronic circuits requiring a robust PNP transistor with high current handling capabilities.

Q & A

  1. What is the package type of the BCX52H6327XTSA1 transistor?
    The BCX52H6327XTSA1 transistor is packaged in the SOT-89 format.
  2. What is the polarization of the BCX52H6327XTSA1 transistor?
    The BCX52H6327XTSA1 transistor is a PNP bipolar junction transistor.
  3. What is the maximum collector current of the BCX52H6327XTSA1 transistor?
    The maximum collector current of the BCX52H6327XTSA1 transistor is 1 A.
  4. What is the collector-emitter voltage (V(CEO)) of the BCX52H6327XTSA1 transistor?
    The collector-emitter voltage (V(CEO)) of the BCX52H6327XTSA1 transistor is 60 V.
  5. What is the current gain of the BCX52H6327XTSA1 transistor?
    The current gain of the BCX52H6327XTSA1 transistor is 160.
  6. Is the BCX52H6327XTSA1 transistor RoHS compliant?
    Yes, the BCX52H6327XTSA1 transistor is RoHS compliant.
  7. What is the total power dissipation (P(tot)) of the BCX52H6327XTSA1 transistor?
    The total power dissipation (P(tot)) of the BCX52H6327XTSA1 transistor is 1 W.
  8. What are some potential applications of the BCX52H6327XTSA1 transistor?
    Potential applications include general-purpose amplification and switching circuits, AF input stages, and driver applications in automotive and industrial control systems.
  9. Is the BCX52H6327XTSA1 transistor suitable for surface mount technology (SMT) assembly?
    Yes, the BCX52H6327XTSA1 transistor in the SOT-89 package is suitable for SMT assembly.
  10. Where can I find the datasheet for the BCX52H6327XTSA1 transistor?
    You can find the datasheet for the BCX52H6327XTSA1 transistor on the official Infineon Technologies website or through authorized distributors like Rutronik24 and Infinity Semiconductor.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

$0.13
2,786

Please send RFQ , we will respond immediately.

Same Series
BCX5116H6433XTMA1
BCX5116H6433XTMA1
TRANS PNP 45V 1A SOT89
BCX5216H6327XTSA1
BCX5216H6327XTSA1
TRANS PNP 60V 1A SOT89
BCX52H6327XTSA1
BCX52H6327XTSA1
TRANS PNP 60V 1A SOT89
BCX5310H6327XTSA1
BCX5310H6327XTSA1
TRANS PNP 80V 1A SOT89
BCX53H6327XTSA1
BCX53H6327XTSA1
TRANS PNP 80V 1A SOT89
BCX5116H6327XTSA1
BCX5116H6327XTSA1
TRANS PNP 45V 1A SOT89
BCX5216E6327HTSA1
BCX5216E6327HTSA1
TRANS PNP 60V 1A SOT89
BCX5310E6327HTSA1
BCX5310E6327HTSA1
TRANS PNP 80V 1A SOT89
BCX5316E6433HTMA1
BCX5316E6433HTMA1
TRANS PNP 80V 1A SOT89
BCX5216E6433HTMA1
BCX5216E6433HTMA1
TRANS PNP 60V 1A SOT89
BCX53E6327HTSA1
BCX53E6327HTSA1
TRANS PNP 80V 1A SOT89
BCX5316E6327HTSA1
BCX5316E6327HTSA1
TRANS PNP 80V 1A SOT89

Similar Products

Part Number BCX52H6327XTSA1 BCX53H6327XTSA1 BCX55H6327XTSA1 BCX51H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 125MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

Related Product By Categories

BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
BTS723GWXUMA1
BTS723GWXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP