BCX52H6327XTSA1
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Infineon Technologies BCX52H6327XTSA1

Manufacturer No:
BCX52H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX52H6327XTSA1 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is packaged in the SOT-89 format and is designed for general-purpose applications. It is part of Infineon's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
PackageSOT-89
PolarizationPNP
Collector Current (I(C))1 A
Collector-Emitter Voltage (V(CEO))60 V
Current Gain160
Total Power Dissipation (P(tot))1 W
Collector-Base Voltage (V(CBO))60 V
RoHS StatusRoHS-conform

Key Features

  • High current gain of 160, making it suitable for amplification and switching applications.
  • Collector-Emitter Voltage of 60 V and Collector-Base Voltage of 60 V, providing robust performance in various circuits.
  • Total power dissipation of 1 W, ensuring reliable operation under moderate power conditions.
  • Pb-free (RoHS compliant) package, adhering to environmental standards.
  • SOT-89 package, which is compact and suitable for surface mount technology (SMT) assembly.

Applications

  • General-purpose amplification and switching circuits.
  • Audio frequency (AF) input stages and driver applications.
  • Automotive and industrial control systems where reliability and high current gain are essential.
  • Other electronic circuits requiring a robust PNP transistor with high current handling capabilities.

Q & A

  1. What is the package type of the BCX52H6327XTSA1 transistor?
    The BCX52H6327XTSA1 transistor is packaged in the SOT-89 format.
  2. What is the polarization of the BCX52H6327XTSA1 transistor?
    The BCX52H6327XTSA1 transistor is a PNP bipolar junction transistor.
  3. What is the maximum collector current of the BCX52H6327XTSA1 transistor?
    The maximum collector current of the BCX52H6327XTSA1 transistor is 1 A.
  4. What is the collector-emitter voltage (V(CEO)) of the BCX52H6327XTSA1 transistor?
    The collector-emitter voltage (V(CEO)) of the BCX52H6327XTSA1 transistor is 60 V.
  5. What is the current gain of the BCX52H6327XTSA1 transistor?
    The current gain of the BCX52H6327XTSA1 transistor is 160.
  6. Is the BCX52H6327XTSA1 transistor RoHS compliant?
    Yes, the BCX52H6327XTSA1 transistor is RoHS compliant.
  7. What is the total power dissipation (P(tot)) of the BCX52H6327XTSA1 transistor?
    The total power dissipation (P(tot)) of the BCX52H6327XTSA1 transistor is 1 W.
  8. What are some potential applications of the BCX52H6327XTSA1 transistor?
    Potential applications include general-purpose amplification and switching circuits, AF input stages, and driver applications in automotive and industrial control systems.
  9. Is the BCX52H6327XTSA1 transistor suitable for surface mount technology (SMT) assembly?
    Yes, the BCX52H6327XTSA1 transistor in the SOT-89 package is suitable for SMT assembly.
  10. Where can I find the datasheet for the BCX52H6327XTSA1 transistor?
    You can find the datasheet for the BCX52H6327XTSA1 transistor on the official Infineon Technologies website or through authorized distributors like Rutronik24 and Infinity Semiconductor.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX52H6327XTSA1 BCX53H6327XTSA1 BCX55H6327XTSA1 BCX51H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 125MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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