Overview
The BCV62CE6327HTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is designed for automotive and general-purpose applications, offering a robust set of specifications that ensure reliable performance in various electronic circuits. The transistor is packaged in a TO-253-4 or TO-253AA surface mount package, making it suitable for a wide range of applications where space efficiency is crucial.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-253-4, TO-253AA |
| Polarity | PNP |
| Collector Emitter Breakdown Voltage (Vceo) | 30 V |
| Max Collector Current (Ic) | 100 mA |
| Transition Frequency (fT) | 250 MHz |
| DC Current Gain (hFE) Min | 125 @ 2mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 650 mV @ 5mA, 100mA |
| Collector Base Voltage (VCBO) | 30 V |
| Emitter Base Voltage (VEBO) | 6 V |
| Max Power Dissipation | 300 mW |
| Height | 1 mm |
| Length | 2.9 mm |
| Width | 2.9 mm |
| REACH SVHC Compliance | No SVHC |
Key Features
- High Reliability: Designed for automotive and general-purpose applications, ensuring robust performance under various conditions.
- Compact Packaging: Available in TO-253-4 and TO-253AA surface mount packages, ideal for space-constrained designs.
- Low Saturation Voltage: Vce Saturation of 650 mV at 5mA and 100mA, ensuring efficient operation in saturation mode.
- High Transition Frequency: fT of 250 MHz, suitable for high-frequency applications.
- Compliance with Regulations: Compliant with REACH SVHC and RoHS standards, ensuring safe and environmentally friendly use.
Applications
The BCV62CE6327HTSA1 transistor is versatile and can be used in a variety of applications, including:
- Automotive Systems: Suitable for use in automotive electronics due to its robust specifications and reliability.
- General-Purpose Amplification: Can be used in general-purpose amplification circuits where a PNP transistor with high current gain is required.
- High-Frequency Circuits: Appropriate for high-frequency applications due to its high transition frequency.
- Industrial Control Systems: Used in industrial control systems where reliability and efficiency are critical.
Q & A
- What is the collector-emitter breakdown voltage of the BCV62CE6327HTSA1 transistor?
The collector-emitter breakdown voltage (Vceo) is 30 V. - What is the maximum collector current of the BCV62CE6327HTSA1 transistor?
The maximum collector current (Ic) is 100 mA. - What is the transition frequency of the BCV62CE6327HTSA1 transistor?
The transition frequency (fT) is 250 MHz. - What is the minimum DC current gain (hFE) of the BCV62CE6327HTSA1 transistor?
The minimum DC current gain (hFE) is 125 at 2mA and 5V. - What is the Vce saturation voltage of the BCV62CE6327HTSA1 transistor?
The Vce saturation voltage is 650 mV at 5mA and 100mA. - Is the BCV62CE6327HTSA1 transistor compliant with REACH SVHC regulations?
Yes, the transistor is compliant with REACH SVHC regulations and contains no SVHC. - What are the dimensions of the BCV62CE6327HTSA1 transistor package?
The dimensions are 1 mm in height, 2.9 mm in length, and 2.9 mm in width. - What is the maximum power dissipation of the BCV62CE6327HTSA1 transistor?
The maximum power dissipation is 300 mW. - In what types of applications is the BCV62CE6327HTSA1 transistor commonly used?
The transistor is commonly used in automotive systems, general-purpose amplification, high-frequency circuits, and industrial control systems. - What is the emitter-base voltage (VEBO) of the BCV62CE6327HTSA1 transistor?
The emitter-base voltage (VEBO) is 6 V.
