MBT3904DW1T1G-M01
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onsemi MBT3904DW1T1G-M01

Manufacturer No:
MBT3904DW1T1G-M01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN SS 40V 0.2A SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBT3904DW1T1G-M01 is a dual general-purpose NPN bipolar junction transistor (BJT) produced by onsemi. This component is designed as a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is housed in the SOT-363 (SC-88) six-leaded surface mount package. By integrating two discrete transistors into a single package, it offers enhanced convenience and space efficiency for various electronic designs.

Key Specifications

ParameterValue
Material of TransistorSilicon (Si)
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.15 W
Maximum Collector-Emitter Voltage (Vce)40 V
Maximum Collector Current (Ic max)0.2 A
Transition Frequency (ft)300 MHz
Forward Current Transfer Ratio (hFE), MIN100
PackageSOT-363 (SC-88)

Key Features

  • Dual general-purpose NPN transistors in a single SOT-363 package, enhancing space efficiency and convenience.
  • Low VCE(sat) of 0.4 V, indicating low saturation voltage.
  • Compliance with RoHS requirements and Halogen Free, making it suitable for environmentally friendly designs.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Excellent power dissipation and thermal resistance.

Applications

The MBT3904DW1T1G-M01 is designed for general-purpose amplifier applications. It is particularly useful in scenarios where space is limited and the integration of multiple transistors is necessary. Common applications include:

  • Amplifier circuits in audio and signal processing systems.
  • Switching circuits in power management and control systems.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Other applications requiring compact, reliable, and high-performance transistor solutions.

Q & A

  1. What is the package type of the MBT3904DW1T1G-M01 transistor?
    The MBT3904DW1T1G-M01 is housed in the SOT-363 (SC-88) six-leaded surface mount package.
  2. What is the maximum collector power dissipation of the MBT3904DW1T1G-M01?
    The maximum collector power dissipation is 0.15 W.
  3. What is the maximum collector-emitter voltage of the MBT3904DW1T1G-M01?
    The maximum collector-emitter voltage is 40 V.
  4. What is the transition frequency of the MBT3904DW1T1G-M01?
    The transition frequency is 300 MHz.
  5. Is the MBT3904DW1T1G-M01 RoHS compliant?
    Yes, the MBT3904DW1T1G-M01 is RoHS compliant and Halogen Free.
  6. What are the typical applications of the MBT3904DW1T1G-M01?
    General-purpose amplifier applications, including audio and signal processing systems, switching circuits, and automotive electronics.
  7. Is the MBT3904DW1T1G-M01 AEC-Q101 qualified?
    Yes, the MBT3904DW1T1G-M01 is AEC-Q101 qualified.
  8. What is the forward current transfer ratio (hFE) of the MBT3904DW1T1G-M01?
    The minimum forward current transfer ratio (hFE) is 100.
  9. Is the MBT3904DW1T1G-M01 still in production?
    No, the MBT3904DW1T1G-M01 is obsolete and no longer manufactured.
  10. What are the available substitutes for the MBT3904DW1T1G-M01?
    Similar models such as the MBT3904DW1 can be used as substitutes.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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MBT3904DW1T1G-M01
MBT3904DW1T1G-M01
onsemi
TRANS NPN SS 40V 0.2A SC88

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