Overview
The MBT3904DW1T1G-M01 is a dual general-purpose NPN bipolar junction transistor (BJT) produced by onsemi. This component is designed as a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is housed in the SOT-363 (SC-88) six-leaded surface mount package. By integrating two discrete transistors into a single package, it offers enhanced convenience and space efficiency for various electronic designs.
Key Specifications
Parameter | Value |
---|---|
Material of Transistor | Silicon (Si) |
Polarity | NPN |
Maximum Collector Power Dissipation (Pc) | 0.15 W |
Maximum Collector-Emitter Voltage (Vce) | 40 V |
Maximum Collector Current (Ic max) | 0.2 A |
Transition Frequency (ft) | 300 MHz |
Forward Current Transfer Ratio (hFE), MIN | 100 |
Package | SOT-363 (SC-88) |
Key Features
- Dual general-purpose NPN transistors in a single SOT-363 package, enhancing space efficiency and convenience.
- Low VCE(sat) of 0.4 V, indicating low saturation voltage.
- Compliance with RoHS requirements and Halogen Free, making it suitable for environmentally friendly designs.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Excellent power dissipation and thermal resistance.
Applications
The MBT3904DW1T1G-M01 is designed for general-purpose amplifier applications. It is particularly useful in scenarios where space is limited and the integration of multiple transistors is necessary. Common applications include:
- Amplifier circuits in audio and signal processing systems.
- Switching circuits in power management and control systems.
- Automotive electronics due to its AEC-Q101 qualification.
- Other applications requiring compact, reliable, and high-performance transistor solutions.
Q & A
- What is the package type of the MBT3904DW1T1G-M01 transistor?
The MBT3904DW1T1G-M01 is housed in the SOT-363 (SC-88) six-leaded surface mount package. - What is the maximum collector power dissipation of the MBT3904DW1T1G-M01?
The maximum collector power dissipation is 0.15 W. - What is the maximum collector-emitter voltage of the MBT3904DW1T1G-M01?
The maximum collector-emitter voltage is 40 V. - What is the transition frequency of the MBT3904DW1T1G-M01?
The transition frequency is 300 MHz. - Is the MBT3904DW1T1G-M01 RoHS compliant?
Yes, the MBT3904DW1T1G-M01 is RoHS compliant and Halogen Free. - What are the typical applications of the MBT3904DW1T1G-M01?
General-purpose amplifier applications, including audio and signal processing systems, switching circuits, and automotive electronics. - Is the MBT3904DW1T1G-M01 AEC-Q101 qualified?
Yes, the MBT3904DW1T1G-M01 is AEC-Q101 qualified. - What is the forward current transfer ratio (hFE) of the MBT3904DW1T1G-M01?
The minimum forward current transfer ratio (hFE) is 100. - Is the MBT3904DW1T1G-M01 still in production?
No, the MBT3904DW1T1G-M01 is obsolete and no longer manufactured. - What are the available substitutes for the MBT3904DW1T1G-M01?
Similar models such as the MBT3904DW1 can be used as substitutes.