Overview
The BC847BPDXV6T1G is a dual NPN/PNP bipolar transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-563 package, which is optimized for low power surface mount applications. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (NPN) | VCEO | 45 | - | - | V |
| Collector-Emitter Voltage (PNP) | VCEO | -45 | - | - | V |
| Collector-Base Voltage (NPN) | VCBO | 50 | - | - | V |
| Collector-Base Voltage (PNP) | VCBO | -50 | - | - | V |
| Emitter-Base Voltage (NPN) | VEBO | 6.0 | - | - | V |
| Emitter-Base Voltage (PNP) | VEBO | -5.0 | - | - | V |
| Collector Current - Continuous (NPN/PNP) | IC | 100 | - | - | mAdc |
| DC Current Gain (NPN) | hFE | 200 | - | 475 | - |
| DC Current Gain (PNP) | hFE | 200 | - | 475 | - |
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | - | - | 0.25 | V |
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | - | - | 0.7 | V |
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) | - | - | 0.7 | V |
| Current-Gain Bandwidth Product (NPN) | fT | 100 | - | - | MHz |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Dual NPN/PNP Configuration: Provides flexibility in circuit design and application.
- Low Power Surface Mount Package (SOT-563): Ideal for low power applications and compact designs.
- General Purpose Amplifier Applications: Versatile for a wide range of amplifier circuits.
- High DC Current Gain (hFE): Ranges from 200 to 475, ensuring reliable and efficient operation.
- Low Collector-Emitter Saturation Voltage (VCE(sat)): Minimizes power loss and enhances efficiency.
Applications
- General Purpose Amplifier Circuits: Suitable for various amplifier applications in electronic devices.
- Automotive Electronics: Qualified for use in automotive systems due to AEC-Q101 qualification and PPAP capability.
- Consumer Electronics: Used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
- Industrial Control Systems: Applicable in industrial control circuits where reliability and durability are crucial.
Q & A
- What is the package type of the BC847BPDXV6T1G transistor?
The BC847BPDXV6T1G transistor is housed in the SOT-563 package, designed for low power surface mount applications.
- Is the BC847BPDXV6T1G transistor AEC-Q101 qualified?
Yes, the BC847BPDXV6T1G transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other specific applications.
- What is the maximum collector-emitter voltage for the NPN transistor?
The maximum collector-emitter voltage (VCEO) for the NPN transistor is 45 V.
- What is the maximum collector-emitter voltage for the PNP transistor?
The maximum collector-emitter voltage (VCEO) for the PNP transistor is -45 V.
- What is the typical DC current gain (hFE) range for the BC847BPDXV6T1G transistor?
The typical DC current gain (hFE) range for the BC847BPDXV6T1G transistor is from 200 to 475.
- What is the collector-emitter saturation voltage (VCE(sat)) for the transistor?
The collector-emitter saturation voltage (VCE(sat)) for the transistor is typically 0.25 V.
- Is the BC847BPDXV6T1G transistor Pb-free and RoHS compliant?
Yes, the BC847BPDXV6T1G transistor is Pb-free and RoHS compliant.
- What is the current-gain bandwidth product (fT) for the NPN transistor?
The current-gain bandwidth product (fT) for the NPN transistor is 100 MHz.
- In what types of applications is the BC847BPDXV6T1G transistor commonly used?
The BC847BPDXV6T1G transistor is commonly used in general purpose amplifier circuits, automotive electronics, consumer electronics, and industrial control systems.
- What is the maximum continuous collector current (IC) for the BC847BPDXV6T1G transistor?
The maximum continuous collector current (IC) for the BC847BPDXV6T1G transistor is 100 mA.
