Overview
The BC846S/DG/B4F is an NPN general-purpose double transistor produced by Nexperia USA Inc. This component is designed to provide two independent transistors in a single package, which helps in reducing the number of components and board space in electronic designs. The BC846S is housed in a small SOT363 package, making it suitable for a variety of applications where space is a constraint.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| V(BR)CBO (Collector-Base Breakdown Voltage) | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 80 | - | - | V |
| V(BR)CEO (Collector-Emitter Breakdown Voltage) | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 65 | - | - | V |
| V(BR)EBO (Emitter-Base Breakdown Voltage) | IC = 0 A; IE = 100 µA; Tamb = 25 °C | 6 | - | - | V |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | 110 | - | - | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | - | - | 300 | mV |
| VBEsat (Base-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | - | 770 | - | mV |
| fT (Transition Frequency) | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C | 100 | - | - | MHz |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 300 | mW |
| Tj (Maximum Junction Temperature) | - | - | - | 150 | °C |
Key Features
- Two independent NPN transistors in a single SOT363 package, reducing component count and board space.
- No mutual interference between the transistors.
- General-purpose switching and amplification capabilities.
- High collector-base and collector-emitter breakdown voltages.
- Low collector-emitter saturation voltage.
- High transition frequency for high-speed applications.
Applications
The BC846S/DG/B4F is versatile and can be used in various applications across different industries, including:
- Automotive systems for general-purpose switching and amplification.
- Industrial control systems for reliable and efficient operation.
- Consumer electronics for compact and efficient designs.
- Mobile and wearable devices where space is limited.
- Power and computing applications requiring high reliability and performance.
Q & A
- What is the package type of the BC846S/DG/B4F transistor?
The BC846S/DG/B4F is housed in a SOT363 package. - What are the key benefits of using the BC846S/DG/B4F?
The key benefits include reduced component count, no mutual interference between the transistors, and compact design. - What is the maximum collector-base breakdown voltage of the BC846S/DG/B4F?
The maximum collector-base breakdown voltage is 80 V. - What is the typical DC current gain (hFE) of the BC846S/DG/B4F?
The typical DC current gain (hFE) is 110. - What is the maximum collector-emitter saturation voltage of the BC846S/DG/B4F?
The maximum collector-emitter saturation voltage is 300 mV. - What is the transition frequency of the BC846S/DG/B4F?
The transition frequency is 100 MHz. - What is the maximum total power dissipation of the BC846S/DG/B4F at ambient temperatures up to 25 °C?
The maximum total power dissipation is 300 mW. - What is the maximum junction temperature of the BC846S/DG/B4F?
The maximum junction temperature is 150 °C. - In which industries can the BC846S/DG/B4F be applied?
The BC846S/DG/B4F can be applied in automotive, industrial, consumer electronics, mobile, and power computing applications. - How can I obtain samples of the BC846S/DG/B4F?
Samples can be obtained through Nexperia's sales organization or their network of global and regional distributors.
