Overview
The BC846S/DG/B4X is an NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is designed for a wide range of applications, including general-purpose switching and amplification. It is housed in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient electronic designs.
The BC846S is part of Nexperia’s extensive portfolio of bipolar transistors, which are known for their reliability, efficiency, and robust performance. These transistors are used across various industries, including automotive, industrial, power, computing, consumer, mobile, and wearables.
Key Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| Collector-Base Breakdown Voltage (VBRCBO) | 80 | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C |
| Collector-Emitter Breakdown Voltage (VBRCEO) | 65 | V | IC = 2 mA; IB = 0 A; Tamb = 25 °C |
| Emitter-Base Breakdown Voltage (VBREBO) | 6 | V | IC = 0 A; IE = 100 µA; Tamb = 25 °C |
| Collector Current (IC) | 100 | mA | |
| Collector-Emitter Saturation Voltage (VCEsat) | 300 | mV | IC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C |
| Base-Emitter Saturation Voltage (VBEsat) | 770 | mV | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C |
| Transition Frequency (fT) | 100 | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C |
| Total Power Dissipation (Ptot) | 300 | mW | Tamb ≤ 25 °C; Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint |
| Operating Temperature Range | -65 to 150 | °C | |
| Package | SOT23 (TO236AB) |
Key Features
- General-Purpose Transistor: Suitable for general-purpose switching and amplification applications.
- Compact Package: Housed in a small SOT23 (TO236AB) SMD plastic package, ideal for space-constrained designs.
- High Breakdown Voltages: Collector-base breakdown voltage of 80 V, collector-emitter breakdown voltage of 65 V, and emitter-base breakdown voltage of 6 V.
- Low Saturation Voltages: Collector-emitter saturation voltage of 300 mV and base-emitter saturation voltage of 770 mV.
- High Transition Frequency: Transition frequency of 100 MHz, making it suitable for high-frequency applications.
- Wide Operating Temperature Range: Operates over a temperature range of -65 to 150 °C.
- RoHS Compliant: Compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability.
Applications
- Automotive Systems: Used in various automotive applications due to its robust performance and wide operating temperature range.
- Industrial Control Systems: Suitable for industrial control systems requiring reliable switching and amplification.
- Consumer Electronics: Found in consumer electronics such as audio equipment, home appliances, and mobile devices.
- Power Management: Used in power management circuits for efficient power handling.
- Wearables and IoT Devices: Ideal for wearables and IoT devices due to its compact size and low power consumption.
Q & A
- What is the collector-base breakdown voltage of the BC846S transistor?
The collector-base breakdown voltage (VBRCBO) is 80 V.
- What is the maximum collector current of the BC846S transistor?
The maximum collector current (IC) is 100 mA.
- What is the transition frequency of the BC846S transistor?
The transition frequency (fT) is 100 MHz.
- What is the operating temperature range of the BC846S transistor?
The operating temperature range is -65 to 150 °C.
- What package type is the BC846S transistor available in?
The BC846S transistor is available in the SOT23 (TO236AB) SMD plastic package.
- Is the BC846S transistor RoHS compliant?
Yes, the BC846S transistor is RoHS compliant.
- What are the typical applications of the BC846S transistor?
The BC846S transistor is used in automotive systems, industrial control systems, consumer electronics, power management circuits, and wearables/IoT devices.
- What is the collector-emitter saturation voltage of the BC846S transistor?
The collector-emitter saturation voltage (VCEsat) is 300 mV.
- What is the base-emitter saturation voltage of the BC846S transistor?
The base-emitter saturation voltage (VBEsat) is 770 mV.
- How much power can the BC846S transistor dissipate?
The total power dissipation (Ptot) is 300 mW at Tamb ≤ 25 °C.
