Overview
The MBT3946DW1T1G is a complementary general-purpose transistor device produced by onsemi. It is designed as a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is housed in the SOT-363-6 surface mount package. This device combines two discrete transistors (one PNP and one NPN) in a single package, making it ideal for low-power surface mount applications where board space is limited.
This device is particularly suited for general-purpose amplifier applications and offers several advantages, including reduced board space and component count, and simplified circuit design.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | V(BR)CEO | 40 | -40 | Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | -40 | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | -5.0 | Vdc |
| Base Cutoff Current | ICBO | - | 1.0 nA | A |
| Current Gain (hFE) | hFE | 100 | 300 | - |
| Saturation Voltage (VCE(sat)) | VCE(sat) | - | ≤0.4 V | V |
| Noise Figure | NF | - | 5.0 dB (NPN), 4.0 dB (PNP) | dB |
Key Features
- Current Gain (hFE): 100 to 300
- Low Saturation Voltage (VCE(sat)): ≤0.4 V
- Simplified Circuit Design: Combines two discrete transistors in one package
- Reduced Board Space and Component Count: Ideal for low-power surface mount applications
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly packaging
Applications
The MBT3946DW1T1G is designed for general-purpose amplifier applications, making it suitable for a variety of uses such as:
- Low-power amplifier circuits
- Automotive electronics
- Consumer electronics
- Industrial control systems
- Any application requiring compact, low-power transistor solutions
Q & A
- What is the package type of the MBT3946DW1T1G?
The MBT3946DW1T1G is housed in the SOT-363-6 surface mount package.
- What are the key advantages of using the MBT3946DW1T1G?
The device simplifies circuit design, reduces board space, and reduces component count. It is also AEC-Q101 qualified and PPAP capable.
- What is the current gain (hFE) range of the MBT3946DW1T1G?
The current gain (hFE) ranges from 100 to 300.
- What is the maximum collector-emitter voltage for the MBT3946DW1T1G?
The maximum collector-emitter voltage is 40 V for NPN and -40 V for PNP.
- Is the MBT3946DW1T1G environmentally friendly?
Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are the typical applications for the MBT3946DW1T1G?
It is used in general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
- What is the noise figure for the MBT3946DW1T1G?
The noise figure is up to 5.0 dB for NPN and 4.0 dB for PNP.
- How does the MBT3946DW1T1G reduce component count?
By combining two discrete transistors (one PNP and one NPN) in a single package, it reduces the overall component count in a circuit.
- What is the saturation voltage (VCE(sat)) of the MBT3946DW1T1G?
The saturation voltage (VCE(sat)) is ≤0.4 V.
- Is the MBT3946DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
