BC847BPDXV6T5G
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onsemi BC847BPDXV6T5G

Manufacturer No:
BC847BPDXV6T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 45V 0.1A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BPDXV6T5G is a dual general-purpose transistor produced by onsemi. This component is designed for low power surface mount applications and is housed in the SOT-563 package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The transistor is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter Voltage (NPN)VCEO45V
Collector-Base Voltage (NPN)VCBO50V
Emitter-Base Voltage (NPN)VEBO6.0V
Collector Current - Continuous (NPN)IC100mAdc
Collector-Emitter Voltage (PNP)VCEO-45V
Collector-Base Voltage (PNP)VCBO-50V
Emitter-Base Voltage (PNP)VEBO-5.0V
Collector Current - Continuous (PNP)IC-100mAdc
Total Device Dissipation (One Junction Heated)PD357mW
Thermal Resistance - Junction-to-Ambient (One Junction Heated)RJA350°C/W
Total Device Dissipation (Both Junctions Heated)PD500mW
Thermal Resistance - Junction-to-Ambient (Both Junctions Heated)RJA250°C/W

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Dual general-purpose transistor configuration (NPN and PNP) in a single package.
  • Low power surface mount SOT-563 package.
  • High collector-emitter voltage ratings (45 V for NPN, -45 V for PNP).
  • Low thermal resistance and high total device dissipation capabilities.

Applications

The BC847BPDXV6T5G is versatile and can be used in a variety of general-purpose amplifier applications. It is particularly suitable for:

  • Automotive systems due to its AEC-Q101 qualification.
  • Consumer electronics requiring low power and high reliability.
  • Industrial control systems where robustness and compliance with environmental standards are crucial.
  • Audio and signal processing circuits where dual transistor configurations are beneficial.

Q & A

  1. What is the package type of the BC847BPDXV6T5G? The BC847BPDXV6T5G is housed in the SOT-563 package.
  2. Is the BC847BPDXV6T5G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  3. What are the maximum collector-emitter voltages for NPN and PNP transistors? The maximum collector-emitter voltage is 45 V for NPN and -45 V for PNP.
  4. What is the continuous collector current rating for the BC847BPDXV6T5G? The continuous collector current rating is 100 mA for NPN and -100 mA for PNP.
  5. Is the BC847BPDXV6T5G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  6. What is the thermal resistance - junction-to-ambient for one junction heated? The thermal resistance - junction-to-ambient for one junction heated is 350 °C/W.
  7. What are the typical applications of the BC847BPDXV6T5G? It is used in general-purpose amplifier applications, automotive systems, consumer electronics, industrial control systems, and audio and signal processing circuits.
  8. What is the total device dissipation for both junctions heated? The total device dissipation for both junctions heated is 500 mW.
  9. Is the BC847BPDXV6T5G available in tape and reel packaging? Yes, it is available in tape and reel packaging.
  10. What are the emitter-base breakdown voltages for NPN and PNP transistors? The emitter-base breakdown voltage is 6.0 V for NPN and -5.0 V for PNP.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:500mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
BC847BPDXV6T1G
BC847BPDXV6T1G
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BC847BPDXV6T5G
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Similar Products

Part Number BC847BPDXV6T5G BC847BPDXV6T1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 500mW 357mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563

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