Overview
The NCV1413BDR2G is a high voltage, high current Darlington transistor array produced by onsemi. This component is part of the MC1413 family and is specifically designed for automotive and other applications requiring site and change control. It features seven NPN Darlington connected transistors, making it well-suited for driving lamps, relays, or printer hammers in various industrial and consumer applications. The device is known for its high breakdown voltage and internal suppression diodes, which ensure freedom from problems associated with inductive loads.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Output Voltage | VO | 50 | V |
| Input Voltage | VI | 30 | V |
| Collector Current - Continuous | IC | 500 | mA |
| Base Current - Continuous | IB | 25 | mA |
| Operating Ambient Temperature Range | TA | -40 to +125 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | °C/W |
| Thermal Resistance, Junction-to-Case | RθJC | 20 | °C/W |
| Electrostatic Discharge Sensitivity (ESD) | ESD | 2000 (HBM), 400 (MM), 1500 (CDM) | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 (IC = 350 mA, IB = 500 μA) | V |
| Input Current - On Condition | II(on) | 0.93 - 1.35 | mA |
| Input Current - Off Condition | II(off) | 50 - 100 | μA |
Key Features
- Pb-Free packages available, making it suitable for environmentally friendly applications.
- High breakdown voltage and internal suppression diodes to handle inductive loads.
- Peak inrush currents up to 500 mA, enabling the device to drive incandescent lamps.
- Compatible with 5.0 V TTL or CMOS logic systems due to the 2.7 kΩ series input resistor.
- NCV prefix indicates suitability for automotive and other applications requiring site and change control.
- High DC current gain (hFE) of 1000.
- Low turn-on and turn-off delay times (0.25 - 1.0 μs).
Applications
The NCV1413BDR2G is versatile and can be used in a variety of applications, including:
- Driving lamps and relays in industrial and consumer electronics.
- Controlling printer hammers and other high-current devices.
- Automotive systems that require high reliability and robustness.
- General-purpose switching and amplification in high-voltage, high-current environments.
Q & A
- What is the NCV1413BDR2G used for? The NCV1413BDR2G is used for driving high-current loads such as lamps, relays, and printer hammers in various industrial and consumer applications.
- What are the key features of the NCV1413BDR2G? Key features include high breakdown voltage, internal suppression diodes, peak inrush currents up to 500 mA, and compatibility with 5.0 V TTL or CMOS logic.
- What is the operating temperature range of the NCV1413BDR2G? The operating ambient temperature range is -40°C to +125°C.
- Is the NCV1413BDR2G Pb-Free? Yes, Pb-Free packages are available for the NCV1413BDR2G.
- What is the DC current gain (hFE) of the NCV1413BDR2G? The DC current gain (hFE) is 1000.
- What are the typical turn-on and turn-off delay times? The turn-on and turn-off delay times are 0.25 - 1.0 μs.
- What is the maximum collector current? The maximum collector current is 500 mA.
- What is the maximum base current? The maximum base current is 25 mA.
- What are the thermal resistance values for the NCV1413BDR2G? The thermal resistance, junction-to-ambient (RθJA), is 100°C/W, and the thermal resistance, junction-to-case (RθJC), is 20°C/W.
- What is the ESD sensitivity of the NCV1413BDR2G? The ESD sensitivity is 2000 V (HBM), 400 V (MM), and 1500 V (CDM).
