Overview
The NST45010MW6T1G is a dual matched general-purpose transistor produced by onsemi. This transistor is housed in an ultra-small SOT-363 package, making it ideal for portable products. It is designed as a matched pair, eliminating the need for costly trimming and ensuring high parameter matching between the two devices. The NST45010MW6T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -45 | V |
| Collector-Base Voltage | VCBO | - | - | -50 | V |
| Emitter-Base Voltage | VEBO | - | - | -5.0 | V |
| Collector Current - Continuous | IC | - | - | -100 | mAdc |
| Total Device Dissipation Per Device | PD | - | - | 380 | mW |
| Thermal Resistance, Junction to Ambient | RJA | - | - | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 150 | 220 | 290 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | - | - | -300 | mV |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | - | - | -700 | mV |
| Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5 Vdc, f = 100 MHz) | fT | - | - | 100 | MHz |
Key Features
- Current Gain Matching to 10%
- Base-Emitter Voltage Matched to ≤ 2 mV
- Drop-In Replacement for Standard Devices
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
- Current Mirrors
- Differential, Sense, and Balanced Amplifiers
- Mixers
- Detectors and Limiters
Q & A
- What is the package type of the NST45010MW6T1G transistor?
The NST45010MW6T1G transistor is housed in an ultra-small SOT-363 package.
- What are the key applications of the NST45010MW6T1G transistor?
The key applications include current mirrors, differential, sense and balanced amplifiers, mixers, detectors, and limiters.
- Is the NST45010MW6T1G transistor suitable for automotive applications?
- What is the maximum collector-emitter voltage of the NST45010MW6T1G transistor?
The maximum collector-emitter voltage (VCEO) is -45 V.
- What is the thermal resistance, junction to ambient, of the NST45010MW6T1G transistor?
The thermal resistance, junction to ambient (RJA), is 328 °C/W.
- Is the NST45010MW6T1G transistor Pb-free and RoHS compliant?
- What is the current gain matching of the NST45010MW6T1G transistor?
The current gain matching is to 10%.
- What is the base-emitter voltage matching of the NST45010MW6T1G transistor?
The base-emitter voltage is matched to ≤ 2 mV.
- What is the maximum collector current of the NST45010MW6T1G transistor?
The maximum collector current (IC) is -100 mA.
- What is the current-gain - bandwidth product of the NST45010MW6T1G transistor?
The current-gain - bandwidth product (fT) is 100 MHz.
