Overview
The NSVT65011MW6T1G is a dual matched general purpose NPN bipolar junction transistor (BJT) produced by ON Semiconductor. It is housed in an ultra-small SOT-363 package, making it ideal for portable products and applications requiring compact design. This transistor is designed as a matched pair, eliminating the need for costly trimming and ensuring high parameter matching between the two devices. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 65 | V |
| Collector-Base Voltage | VCBO | 80 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) | PD | 380 | mW |
| Thermal Resistance, Junction to Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 150 - 300 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 250 - 600 | mV |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 700 - 950 | mV |
Key Features
- Current Gain Matching to 10%
- Base-Emitter Voltage Matched to 2 mV
- Drop-In Replacement for Standard Devices
- AEC-Q101 Qualified and PPAP Capable for Automotive and Other Demanding Applications
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
- Current Mirrors
- Differential, Sense, and Balanced Amplifiers
- Mixers
- Detectors and Limiters
Q & A
- What is the package type of the NSVT65011MW6T1G transistor? The NSVT65011MW6T1G is housed in an ultra-small SOT-363 package.
- What are the key applications of this transistor? Key applications include Current Mirrors, Differential, Sense and Balanced Amplifiers, Mixers, Detectors, and Limiters.
- Is the NSVT65011MW6T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the maximum collector-emitter voltage of the NSVT65011MW6T1G? The maximum collector-emitter voltage is 65 V.
- What is the continuous collector current rating of this transistor? The continuous collector current rating is 100 mA.
- Is the NSVT65011MW6T1G RoHS compliant? Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the thermal resistance, junction to ambient, of this transistor? The thermal resistance, junction to ambient, is 328 °C/W.
- What is the junction and storage temperature range of the NSVT65011MW6T1G? The junction and storage temperature range is -55 to +150 °C.
- How is the current gain of the NSVT65011MW6T1G specified? The DC current gain (hFE) is specified as 150 to 300 at IC = 10 mA and VCE = 5.0 V.
- What is the base-emitter saturation voltage of this transistor? The base-emitter saturation voltage (VBE(sat)) is 700 to 950 mV at IC = 10 mA and IB = 0.5 mA.
