Overview
The NSVT65010MW6T1G is a dual matched general-purpose transistor produced by onsemi. This PNP matched pair transistor is housed in an ultra-small SOT-363 package, making it ideal for portable products. The device is designed to provide high matching in all parameters, eliminating the need for costly trimming. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mAdc |
| Total Device Dissipation (Per Device, FR-5 Board, TA = 25°C) | PD | 380 | mW |
| Thermal Resistance, Junction to Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 475 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -300 mV | |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -700 mV | |
| Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5 Vdc, f = 100 MHz) | fT | 100 MHz |
Key Features
- Current Gain Matching to 10%
- Base-Emitter Voltage Matched to ≤ 2 mV
- Drop-In Replacement for Standard Devices
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
The NSVT65010MW6T1G is suitable for a variety of applications, including:
- Current Mirrors
- Differential, Sense, and Balanced Amplifiers
- Mixers
- Detectors and Limiters
Q & A
- What is the package type of the NSVT65010MW6T1G transistor? The transistor is housed in an ultra-small SOT-363 package.
- What are the key applications of the NSVT65010MW6T1G? It is used in current mirrors, differential, sense, and balanced amplifiers, mixers, detectors, and limiters.
- Is the NSVT65010MW6T1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the collector-emitter voltage rating of the NSVT65010MW6T1G? The collector-emitter voltage rating is -65 V.
- What is the thermal resistance, junction to ambient, of the NSVT65010MW6T1G? The thermal resistance, junction to ambient, is 328 °C/W.
- Is the NSVT65010MW6T1G Pb-Free and RoHS compliant? Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the current gain matching of the NSVT65010MW6T1G? The current gain matching is to 10%.
- What is the base-emitter voltage matching of the NSVT65010MW6T1G? The base-emitter voltage is matched to ≤ 2 mV.
- What is the maximum collector current of the NSVT65010MW6T1G? The maximum collector current is -100 mA.
- What is the junction and storage temperature range of the NSVT65010MW6T1G? The junction and storage temperature range is -55 to +150 °C.
